Exposure apparatus, exposure method, and method for producing device

ABSTRACT

An exposure apparatus exposes a substrate by irradiating exposure light on the substrate through liquid. The exposure apparatus has a substrate holder for holding the substrate, a substrate stage capable of moving the substrate held by the substrate holder, and a temperature adjusting system for adjusting the temperature of the substrate holder. The temperature of the substrate is controlled so that there is no difference in temperature between the substrate and the liquid, thereby preventing a reduction in exposure accuracy resulting from variation in temperature of the liquid.

This is a Divisional of application Ser. No. 14/070,021 filed Nov. 1,2013, which in turn is a Continuation of application Ser. No. 13/473,438filed May 16, 2012 (now U.S. Pat. No. 8,605,252), which is a Divisionalof application Ser. No. 10/588,297 filed Nov. 2, 2006 (now U.S. Pat. No.8,208,119), which is a National Stage of Application No.PCT/JP2005/001990 filed Feb. 3, 2005. The prior applications, includingthe specifications, drawings and abstracts are incorporated herein byreference in their entirety.

TECHNICAL FIELD

The present invention relates to an exposure apparatus and an exposuremethod for exposing a substrate by radiating an exposure light beam ontothe substrate through a liquid, and a method for producing a devicebased on the use of the exposure apparatus and the exposure method.

BACKGROUND ART

Semiconductor devices and liquid crystal display devices are produced bymeans of the so-called photolithography technique in which a patternformed on a mask is transferred onto a photosensitive substrate. Theexposure apparatus, which is used in the photolithography step, includesa mask stage for supporting the mask and a substrate stage forsupporting the substrate. The pattern on the mask is transferred ontothe substrate via a projection optical system while successively movingthe mask stage and the substrate stage. In recent years, it is demandedto realize the higher resolution of the projection optical system inorder to respond to the further advance of the higher integration of thedevice pattern. As the exposure wavelength to be used is shorter, theresolution of the projection optical system becomes higher. As thenumerical aperture of the projection optical system is larger, theresolution of the projection optical system becomes higher. Therefore,the exposure wavelength, which is used for the exposure apparatus, isshortened year by year, and the numerical aperture of the projectionoptical system is increased as well. The exposure wavelength, which isdominantly used at present, is 248 nm of the KrF excimer laser. However,the exposure wavelength of 193 nm of the ArF excimer laser, which isshorter than the above, is also practically used in some situations.When the exposure is performed, the depth of focus (DOF) is alsoimportant in the same manner as the resolution. The resolution R and thedepth of focus δ are represented by the following expressionsrespectively.

R=k ₁ ·λ/NA  (1)

δ=±k ₂ ·λ/NA ²  (2)

In the expressions, λ represents the exposure wavelength, NA representsthe numerical aperture of the projection optical system, and k₁ and k₂represent the process coefficients. According to the expressions (1) and(2), the following fact is appreciated. That is, when the exposurewavelength λ is shortened and the numerical aperture NA is increased inorder to enhance the resolution R, then the depth of focus δ isnarrowed.

If the depth of focus δ is too narrowed, it is difficult to match thesubstrate surface with respect to the image plane of the projectionoptical system. It is feared that the focus margin is insufficientduring the exposure operation. Accordingly, the liquid immersion methodhas been suggested, which is disclosed, for example, in InternationalPublication No. 99/49504 as a method for substantially shortening theexposure wavelength and widening the depth of focus. In this liquidimmersion method, the space between the lower surface of the projectionoptical system and the substrate surface is filled with a liquid such aswater or any organic solvent to form a liquid immersion area so that theresolution is improved and the depth of focus is magnified about n timesby utilizing the fact that the wavelength of the exposure light beam inthe liquid is 1/n as compared with that in the air (n represents therefractive index of the liquid, which is about 1.2 to 1.6 in ordinarycases).

In relation to the liquid immersion exposure apparatus, the followingarrangement is conceived. That is, for example, when the positioninformation about the substrate is measured, a detecting light beam isradiated onto the liquid, and the measurement is performed on the basisof the detecting light beam through the liquid. In such a situation, ifthe refractive index of the liquid is changed, for example, due to anytemperature change, the measurement accuracy is deteriorated, forexample, due to any fluctuation of the optical path for the detectinglight beam. Similarly, if the refractive index of the liquid is changed,for example, due to any temperature change, the exposure accuracy isdeteriorated, for example, due to any fluctuation of the imagecharacteristic (state of formation of the image) to be obtained throughthe liquid.

DISCLOSURE OF THE INVENTION

The present invention has been made taking the foregoing circumstancesinto consideration, an object of which is to provide an exposureapparatus, an exposure method, and a method for producing a device, inwhich the exposure process and the measurement process can be performedsatisfactorily through the liquid.

In order to achieve the object as described above, the present inventionadopts the following constructions corresponding to FIGS. 1 to 16 asillustrated in embodiments.

According to a first aspect of the present invention, there is providedan exposure apparatus which exposes a substrate by radiating an exposurelight beam onto the substrate through a liquid; the exposure apparatuscomprising a substrate stage which has a substrate-holding member forholding the substrate and which is movable while holding the substrateby the aid of the substrate-holding member; and a temperature adjustmentsystem which performs temperature adjustment for the substrate-holdingmember.

According to the present invention, the substrate, which is held by thesubstrate-holding member, can be adjusted to have a desired temperatureby performing the temperature adjustment by using the temperatureadjustment system for the substrate-holding member which holds thesubstrate. Therefore, the temperature change is suppressed for theliquid which makes contact with the substrate, and it is possible tomaintain the liquid to be in a desired temperature state. Therefore, forexample, even when the exposure apparatus is constructed such that thedetecting light beam is radiated onto the liquid to perform themeasurement process on the basis of the detecting light beam through theliquid, it is possible to maintain the satisfactory measurementaccuracy. Further, it is possible to maintain the satisfactory exposureaccuracy, because the exposure light beam can be radiated onto thesubstrate through the liquid which is in the desired temperature state.

According to a second aspect of the present invention, there is providedan exposure apparatus which exposes a substrate by radiating an exposurelight beam onto the substrate through a liquid; the exposure apparatuscomprising a temperature adjustment system which performs temperatureadjustment for an optical member through which the exposure light beampasses in a state in which the optical member makes contact with theliquid.

According to the present invention, the optical member, through whichthe exposure light beam passes in the state in which the optical membermakes contact with the liquid, is subjected to the temperatureadjustment by using the temperature adjustment system. Accordingly, thetemperature change is suppressed for the liquid which makes contact withthe optical member, and thus it is possible to maintain the liquid to bein the desired temperature state. Therefore, for example, it is possibleto maintain the satisfactory state for the exposure accuracy to beobtained when the substrate is exposed by radiating the exposure lightbeam onto the substrate through the liquid and the satisfactory statefor the measurement accuracy in relation to the exposure light beam viathe liquid and the optical member.

In this arrangement, the optical member, through which the exposurelight beam passes in the state in which the optical member makes contactwith the liquid, includes, for example, an optical member disposed atthe end portion on the image plane side of the projection optical systemin the state in which the space between the projection optical systemand the substrate is filled with the liquid, when the exposure apparatusis provided with the projection optical system for projecting the imageof the pattern. Further, when the exposure apparatus is provided withthe projection optical system for projecting the image of the patternand the measuring sensor arranged on the image plane side of theprojection optical system, for example, the optical member includes, forexample, an optical member (upper plate) which makes contact with theliquid and which is included in various types of optical members forconstructing the measuring sensor, and an optical member which isdisposed at the end portion on the image plane side of the projectionoptical system in the state in which the space between the projectionoptical system and the measuring sensor arranged on the image plane sidethereof is filled with the liquid.

According to a third aspect of the present invention, there is providedan exposure apparatus which exposes a substrate by radiating an exposurelight beam onto the substrate through a liquid; the exposure apparatuscomprising a substrate stage which is movable while holding thesubstrate and which has a member forming a flat portion around thesubstrate; and a temperature adjustment system which performstemperature adjustment for the member forming the flat portion.

According to the present invention, the member forming the flat portionaround the substrate is subjected to the temperature adjustment by usingthe temperature adjustment system, and thus the temperature change ofthe liquid in contact with the flat portion is suppressed. It ispossible to maintain the liquid to have the desired temperature.

In this arrangement, the member forming the flat portion around thesubstrate includes, for example, an member which forms at least aportion or part of the upper surface included in the upper surface ofthe substrate stage and which is provided so as to surround, forexample, the substrate, an upper surface of a reference member which isused when the mask and/or the substrate is subjected to the alignment,and a member (upper plate) which makes contact with the liquid and whichis included in the measuring sensor arranged on the image plane side ofthe projection optical system.

According to a fourth aspect of the present invention, there is providedan exposure apparatus which exposes a substrate by radiating an exposurelight beam onto the substrate through a liquid; the exposure apparatuscomprising a first substrate stage which has a substrate-holding memberfor holding the substrate and which is movable while holding thesubstrate by the aid of the substrate-holding member; a second substratestage which has a substrate-holding member for holding the substrate andwhich is movable while holding the substrate by the aid of thesubstrate-holding member; a measuring station which performs measurementfor the substrate held by one of the stages; an exposure station whichperforms exposure for the substrate held by the other of the stages; andtemperature adjustment systems which are provided for the firstsubstrate stage and the second substrate stage respectively and whichperform temperature adjustment for the substrate-holding member of eachof the stages in the measuring station.

According to the present invention, the temperature adjustment isperformed by using the temperature adjustment system for thesubstrate-holding member which holds the substrate in the measuringstation to perform the measurement process in relation to the substratein the so-called twin-stage type exposure apparatus provided with thefirst substrate stage and the second substrate stage. Accordingly, thesubstrate, which is held by the substrate-holding member, can beadjusted to have the desired temperature.

Therefore, even when the liquid is supplied onto the substrate in theexposure station, then it is possible to suppress the temperature changeand the thermal deformation of the substrate, and it is possible tosuppress the temperature change of the liquid which makes contact withthe substrate as well. Thus, it is possible to maintain the satisfactoryexposure accuracy.

According to a fifth aspect of the present invention, there is providedan exposure apparatus which exposes a substrate by radiating an exposurelight beam onto the substrate through a liquid; the exposure apparatuscomprising a liquid supply mechanism which supplies the liquid; and atemperature sensor which measures a temperature of an object that makescontact with the liquid supplied from the liquid supply mechanism;wherein the liquid supply mechanism adjusts a temperature of the liquidto be supplied on the basis of a measurement result obtained by thetemperature sensor.

According to the present invention, the temperature of the object suchas the substrate which makes contact with the liquid is measured, andthe temperature of the liquid to be supplied is adjusted on the basis ofthe obtained result of the measurement. Therefore, it is possible tosuppress not only the temperature change of the object, but it is alsopossible to suppress the temperature change of the liquid to be suppliedonto the object. Thus, the temperature of the liquid can be maintainedto be in the desired state. Therefore, it is possible to obtain thesatisfactory measurement accuracy and the satisfactory exposureaccuracy. The measurement of the temperature of the object to makecontact with the liquid includes not only the case of the directmeasurement of the temperature of the object, but also the case of themeasurement of the temperature of the object which can be regarded tohave approximately the same temperature as the temperature of the objectto make contact with the liquid, and of the measurement of thetemperature of the object for which the temperature of the object tomake contact with the liquid can be predicted or estimated.

According to the present invention, there is provided a method forproducing a device, comprising using the exposure apparatus according toany one of the aspects described above. According to the presentinvention, the device, which exhibits the desired performance, can beproduced by using the exposure apparatus which is capable ofsatisfactorily performing the exposure process and the measurementprocess through the liquid.

According to a sixth aspect of the present invention, there is providedan exposure method for exposing a substrate by radiating an exposurelight beam onto the substrate through a liquid; the exposure methodcomprising adjusting a temperature of the substrate in consideration ofa temperature of the liquid before starting exposure for the substrate;and exposing the substrate by radiating the exposure light beam onto thesubstrate through the liquid.

According to the present invention, it is possible to avoid theoccurrence of the temperature distribution and the change of thetemperature of the liquid with respect to the desired temperature whenthe substrate and the liquid make contact with each other, by adjustingthe temperature of the substrate in consideration of the temperature ofthe liquid. Therefore, for example, the liquid, which is in contact withthe substrate, can be also maintained at the desired temperature.Therefore, even when the exposure apparatus is constructed such that thedetecting light beam is radiated onto the liquid to perform themeasurement process on the basis of the detecting light beam through theliquid, it is possible to maintain the satisfactory measurementaccuracy. Further, it is possible to maintain the satisfactory exposureaccuracy, because the exposure light beam can be radiated onto thesubstrate through the liquid which is in the desired temperature state.Further, it is also possible to avoid the thermal deformation and thetemperature change of the substrate when the substrate makes contactwith the liquid. The exposure can be performed highly accurately whilemaintaining the satisfactory positional adjustment accuracy and thesatisfactory overlay accuracy.

According to a seventh aspect of the present invention, there isprovided an exposure method for exposing a substrate through a liquid;the exposure method comprising adjusting a temperature of an objectwhich includes the substrate and makes contact with the liquid, on thebasis of a predetermined temperature; and exposing the substrate throughthe liquid which has the predetermined temperature. In this exposuremethod, the temperature of the object is adjusted on the basis of thetemperature (predetermined temperature) of the liquid brought about whenthe liquid immersion exposure is performed. Therefore, it is possible toavoid the variation of the factor which affects the image formationcharacteristic, including, for example, the refractive index and thetemperature of the liquid, while the variation would be otherwise causedby the contact of the liquid with the object. Therefore, it is possibleto guarantee the exposure accuracy of the liquid immersion exposure andthe measurement accuracy before the liquid immersion exposure.

According to an eighth aspect of the present invention, there isprovided an exposure method for exposing a substrate by radiating anexposure light beam onto the substrate through a liquid; the exposuremethod comprising supplying the liquid; and adjusting a temperature ofthe liquid to be supplied, on the basis of a temperature of an objectwhich makes contact with the supplied liquid. According to this exposuremethod, the temperature of the supplied liquid is adjusted on the basisof the temperature of the object such as the substrate which makescontact with the liquid. Therefore, it is possible to suppress thetemperature change of the object, thereby maintaining the temperature ofthe liquid supplied onto the object to be in the desired state.

According to the present invention, there is provided a method forproducing a device, comprising using the exposure method as describedabove. According to the present invention, it is possible to produce thedevice which exhibits the desired performance, in accordance with theexposure method which makes it possible to satisfactorily perform theexposure process and the measurement process through the liquid.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a schematic arrangement illustrating an embodiment of anexposure apparatus of the present invention.

FIG. 2 shows a magnified side view illustrating main parts to depict asubstrate stage and a temperature adjustment system.

FIG. 3 shows a plan view illustrating the substrate stage as viewed froman upper position.

FIGS. 4(a) and 4(b) show the temperature adjustment system whichperforms temperature adjustment for a measuring member.

FIG. 5 shows the temperature adjustment system which performstemperature adjustment for an optical element through which an exposurelight beam passes.

FIG. 6 shows a flow chart illustrating an exemplary exposure methodaccording to the present invention.

FIG. 7 shows the temperature adjustment system which performstemperature adjustment for a substrate before being loaded on asubstrate holder.

FIG. 8 illustrates the measuring operation of a mark-detecting system.

FIG. 9 illustrates the measuring operation of the mark-detecting system.

FIG. 10 shows another embodiment of a temperature adjustment systemaccording to the present invention.

FIG. 11 shows still another embodiment of a temperature adjustmentsystem according to the present invention.

FIG. 12 shows still another embodiment of a temperature adjustmentsystem according to the present invention.

FIGS. 13(a) and 13(b) schematically illustrate the situation of thetemperature change of the liquid supplied from the liquid supplymechanism.

FIG. 14 shows a member for attenuating the temperature variation of theliquid.

FIG. 15 shows a schematic arrangement illustrating an embodiment of anexposure apparatus of the present invention.

FIG. 16 shows a flow chart illustrating exemplary steps of producing asemiconductor device.

BEST MODE FOR CARRYING OUT THE INVENTION

The exposure apparatus according to the present invention will beexplained below with reference to the drawings. However, the presentinvention is not limited thereto.

FIG. 1 shows a schematic arrangement illustrating an embodiment of anexposure apparatus of the present invention. With reference to FIG. 1,the exposure apparatus EX includes a mask stage MST which is movablewhile supporting a mask M, a substrate stage PST which has a substrateholder PH for holding a substrate P and which is movable whilesupporting the substrate P, an illumination optical system IL whichilluminates, with an exposure light beam EL, the mask M supported by themask stage MST, a projection optical system PL which performs theprojection exposure for the substrate P supported by the substrate stagePST with an image of a pattern of the mask M illuminated with theexposure light beam EL, a temperature adjustment system 60 whichperforms temperature adjustment for the substrate holder PH, and acontrol unit CONT which integrally controls the operation of the entireexposure apparatus EX.

The exposure apparatus EX of this embodiment is a liquid immersionexposure apparatus to which the liquid immersion method is applied inorder that the exposure wavelength is substantially shortened to improvethe resolution and the depth of focus is substantially widened. Theexposure apparatus EX includes a liquid supply mechanism 10 whichsupplies the liquid LQ onto the substrate P, and a liquid recoverymechanism 20 which recovers the liquid LQ from the substrate P. In thisembodiment, pure water is used for the liquid LQ. The exposure apparatusEX forms a liquid immersion area AR2 locally on at least a part of thesubstrate P including a projection area AR1 of the projection opticalsystem PL by the liquid LQ supplied from the liquid supply mechanism 10at least during the period in which the image of the pattern of the maskM is transferred onto the substrate P, the liquid immersion area AR2being larger than the projection area AR1 and smaller than the substrateP. Specifically, the exposure apparatus EX is operated as follows. Thatis, the space between the surface (exposure surface) of the substrate Pand the optical element 2 disposed at the end portion on the image planeside of the projection optical system PL is filled with the liquid LQ.The image of the pattern of the mask M is projected onto the substrate Pto expose the substrate P therewith via the projection optical system PLand the liquid LQ disposed between the projection optical system PL andthe substrate P.

The embodiment of the present invention will be explained as exemplifiedby a case using the scanning type exposure apparatus (so-called scanningstepper) as the exposure apparatus EX in which the substrate P isexposed with the pattern formed on the mask M while synchronously movingthe mask M and the substrate P in mutually different directions(opposite directions) in the scanning directions (predetermineddirections). In the following explanation, the X axis direction is thesynchronous movement direction (scanning direction, predetermineddirection) for the mask M and the substrate P in the horizontal plane,the Y axis direction (non-scanning direction) is the direction which isperpendicular to the X axis direction in the horizontal plane, and the Zaxis direction is the direction which is perpendicular to the X axisdirection and the Y axis direction and which is coincident with theoptical axis AX of the projection optical system PL. The directions ofrotation (inclination) about the X axis, the Y axis, and the Z axis aredesignated as θX, θY, and θZ directions respectively. The term“substrate” referred to herein includes those obtained by coating asemiconductor wafer surface with a resist, and the term “mask” includesa reticle formed with a device pattern to be subjected to the reductionprojection onto the substrate.

The illumination optical system IL is provided so that the mask M, whichis supported on the mask stage MST, is illuminated with the exposurelight beam EL. The illumination optical system IL includes, for example,an exposure light source, an optical integrator which uniformizes theilluminance of the light flux radiated from the exposure light source, acondenser lens which collects the exposure light beam EL emitted fromthe optical integrator, a relay lens system, and a variable fielddiaphragm which sets the illumination area on the mask M illuminatedwith the exposure light beam EL to be slit-shaped. The predeterminedillumination area on the mask M is illuminated with the exposure lightbeam EL having a uniform illuminance distribution by the illuminationoptical system IL. Those usable as the exposure light beam EL radiatedfrom the illumination optical system IL include, for example, emissionlines (g-ray, h-ray, i-ray) radiated, for example, from a mercury lamp,far ultraviolet light beams (DUV light beams) such as the KrF excimerlaser beam (wavelength: 248 nm), and vacuum ultraviolet light beams (VUVlight beams) such as the ArF excimer laser beam (wavelength: 193 nm) andthe F₂ laser beam (wavelength: 157 nm). In this embodiment, the ArFexcimer laser beam is used. As described above, the liquid LQ is purewater in this embodiment, through which even the ArF excimer laser beamas the exposure light beam EL is transmissive. Those also capable ofbeing transmitted through pure water include the emission line (g-ray,h-ray, i-ray) and the far ultraviolet light beam (DUV light beam) suchas the KrF excimer laser beam (wavelength: 248 nm).

The mask stage MST is movable while holding the mask M. The mask stageMST is two-dimensionally movable in the plane perpendicular to theoptical axis AX of the projection optical system PL, i.e., in the XYplane, and it is finely rotatable in the θZ direction. The mask stageMST is driven by a mask stage-driving unit MSTD such as a linear motor.The mask stage-driving unit MSTD is controlled by the control unit CONT.A movement mirror 40, which is movable together with the mask stage MST,is provided on the mask stage MST. A laser interferometer 41 is providedat a position opposed to the movement mirror 40. The position in thetwo-dimensional direction and the angle of rotation of the mask M on themask stage MST are measured in real-time by the laser interferometer 41.The result of the measurement is outputted to the control unit CONT. Thecontrol unit CONT drives the mask stage-driving unit MSTD on the basisof the result of the measurement obtained by the laser interferometer 41to thereby position the mask M supported on the mask stage MST.

The projection optical system PL projects the pattern on the mask M ontothe substrate P at a predetermined projection magnification β to performthe exposure. The projection optical system PL includes a plurality ofoptical elements including an optical element (lens) 2 provided at theend portion on the side of the substrate P. The optical elements aresupported by a barrel PK. In this embodiment, the projection opticalsystem PL is based on the reduction system having the projectionmagnification β which is, for example, ¼, ⅕, or ⅛. The projectionoptical system PL may be any one of the 1× magnification system and themagnifying system. The projection optical system PL may be either aprojection optical system of the catoptric type including only acatoptric element or a projection optical system of the dioptric typeincluding only a dioptric element. Alternatively, the projection opticalsystem PL may be a projection optical system of the cata-dioptric typeincluding catoptric and dioptric elements. The optical element 2, whichis disposed at the end portion of the projection optical system PL ofthis embodiment, is provided detachably (exchangeably) with respect tothe barrel PK. The optical element 2, which is disposed at the endportion, is exposed from the barrel PK. The liquid LQ of the liquidimmersion area AR2 makes contact with the optical element 2.Accordingly, the barrel PK, which is formed of metal, is prevented fromany corrosion or the like.

The optical element 2 is formed of calcium fluorite. A water-attracting(lyophilic or liquid-attracting) treatment is performed to the liquidcontact surface 2A of the optical element 2 to enhance the affinity forthe liquid LQ as described later on. Calcium fluorite has a highaffinity for pure water. Therefore, the liquid LQ is successfullyallowed to make tight contact with substantially the entire surface ofthe liquid contact surface 2A of the optical element 2 even when nowater-attracting (lyophilic or liquid-attracting) treatment isperformed. Therefore, it is also allowable to omit the water-attracting(lyophilic or liquid-attracting) treatment to be performed to the liquidcontact surface 2A of the optical element 2. The optical element 2 maybe formed of silica glass having a high affinity for water.

The substrate stage PST includes a Z stage 52 which holds the substrateP by the aid of a substrate holder PH, and an XY stage 53 which supportsthe Z stage 52. The XY stage 53 is supported on a base 54. The substratestage PST is driven by a substrate stage-driving unit PSTD such as alinear motor. The substrate stage-driving unit PSTD is controlled by thecontrol unit CONT. The Z stage 52 is capable of moving the substrate Pheld by the substrate holder PH in the Z axis direction and the θX andθY directions (in the direction of inclination). The XY stage 53 iscapable of moving the substrate P held by the substrate holder PH in theXY directions (in the direction substantially in parallel to the imageplane of the projection optical system PL) by the aid of the Z stage 52.It goes without saying that the Z stage and the XY stage areappropriately provided as an integrated body.

A recess 55 is provided on the substrate stage PST (Z stage 52). Thesubstrate holder PH is arranged in the recess 55. The upper surface 51of the substrate stage PST except for the recess 55 is a flat surface(flat portion) which has substantially the same height as that of (isflush with) the surface of the substrate P held by the substrate holderPH. In this embodiment, a plate member 50 having an upper surface 51 isarranged exchangeably on the substrate stage PST. The liquid immersionarea AR2 can be formed satisfactorily while retaining the liquid LQ onthe image plane side of the projection optical system PL even when theedge area E of the substrate P is subjected to the liquid immersionexposure, because the upper surface 51, which is substantially flushwith the surface of the substrate P, is provided around the substrate P.However, there may be any difference in level between the surface of thesubstrate P and the upper surface 51 of the plate member 50, providedthat the liquid immersion area AR2 can be satisfactorily maintained. Forexample, the upper surface 51 of the plate member 50 may be lower thanthe surface of the substrate P held by the substrate holder PH. A gap ofabout 0.1 to 2 mm is allowed between the edge portion of the substrate Pand the plate member 50 having the flat surface (upper surface) 51provided around the substrate P. However, the liquid LQ scarcely flowsinto the gap owing to the surface tension of the liquid LQ. Even whenthe exposure is performed for the portion in the vicinity of thecircumferential edge of the substrate P, it is possible to retain theliquid LQ under the projection optical system PL owing to the platemember 50. In the case of the exposure apparatus shown in FIG. 1, anupper portion of a movement mirror 42 described later on is higher thanthe upper surface 51 of the substrate stage PST. However, it isdesirable that the upper portion of the movement mirror 42 also hasapproximately the same height as that of (is flush with) the uppersurface 51 of the substrate stage PST.

The movement mirror 42, which is movable together with the substratestage PST with respect to the projection optical system PL, is providedon the substrate stage PST (Z stage 52). A laser interferometer 43 isprovided at a position opposed to the movement mirror 42. The angle ofrotation and the position in the two-dimensional direction of thesubstrate P on the substrate stage PST are measured in real-time by thelaser interferometer 43. The result of the measurement is outputted tothe control unit CONT. The control unit CONT positions the substrate Psupported by the substrate stage PST in the X axis direction and the Yaxis direction by driving the XY stage 53 by the aid of the substratestage-driving unit PSTD in the two-dimensional coordinate system definedby the laser interferometer 43 on the basis of the result of themeasurement performed by the laser interferometer 43.

The exposure apparatus EX has a focus-detecting system 30 for detectingthe surface position information about the surface of the substrate P.The focus-detecting system 30 includes a light-emitting section 30A anda light-receiving section 30B. A detecting light beam is radiated in anoblique direction (from an obliquely upward position) from thelight-emitting section 30A through the liquid LQ onto the surface(exposure surface) of the substrate P. A reflected light beam from thesubstrate P is received by the light-receiving section 30B through theliquid LQ. Accordingly, the focus-detecting system 30 detects thesurface position information about the surface of the substrate P. Thecontrol unit CONT controls the operation of the focus-detecting system30. Further, the control unit CONT detects the position (focus position)in the Z axis direction of the surface of the substrate P with respectto the predetermined reference surface (image plane) on the basis of thelight-receiving result of the light-receiving section 30B. Thefocus-detecting system 30 can also determine the posture or attitude ofthe substrate P in the direction of inclination by determining the focuspositions at a plurality of points on the surface of the substrate Prespectively. A system, which is disclosed, for example, in JapanesePatent Application Laid-open No. 8-37149, can be used for thefocus-detecting system 30. Another focus-detecting system may also beadopted, in which the surface information about the surface of thesubstrate P is detected not through the liquid LQ. In this case, thesurface information about the surface of the substrate P may be detectedat any position away or separated from the projection optical system PL.An exposure apparatus, in which the surface information about thesurface of the substrate P is detected at any position away from theprojection optical system PL, is disclosed, for example, in U.S. Pat.No. 6,674,510, contents of which are incorporated herein by referencewithin a range of permission of the domestic laws and ordinances of thestate designated or selected in this international application.

The control unit CONT controls the position (focus position) of thesubstrate P held by the Z stage 52 in the Z axis direction and theposition in the θX and θY directions by driving the Z stage 52 of thesubstrate stage PST by the aid of the substrate stage-driving unit PSTD.That is, the Z stage 52 is operated on the basis of the instruction fromthe control unit CONT based on the detection result of thefocus-detecting system 30. The angle of inclination and the focusposition (Z position) of the substrate P are controlled so that thesurface (exposure surface) of the substrate P is adjusted to match theimage plane to be formed via the projection optical system PL and theliquid LQ.

A substrate alignment system 350, which detects alignment marks 1 on thesubstrate P or a substrate side reference mark PFM on a reference member300 provided on the Z stage 52, is provided in the vicinity of the endportion of the projection optical system PL. A mask alignment system360, which detects a mask side reference mark MFM on the referencemember 300 provided on the Z stage 52 via the mask M and the projectionoptical system PL, is provided in the vicinity of the mask stage MST. Astructure, which is disclosed, for example, in Japanese PatentApplication Laid-open No. 4-65603, can be used for the substratealignment system 350. A structure, which is disclosed, for example, inJapanese Patent Application Laid-open No. 7-176468, can be used for themask alignment system 360.

The liquid supply mechanism 10 supplies the predetermined liquid LQ tothe image plane side of the projection optical system PL. The liquidsupply mechanism 10 includes a liquid supply section 11 which is capableof feeding the liquid LQ, a liquid temperature-adjusting unit 61 whichadjusts the temperature of the liquid LQ supplied from the liquid supplysection 11, and supply tubes 13 (13A, 13B) each of which has one endconnected to the liquid temperature-adjusting unit 61. The liquid supplysection 11 includes, for example, a tank for accommodating the liquidLQ, and a pressurizing pump. The liquid supply operation of the liquidsupply section 11 is controlled by the control unit CONT. The operationof the liquid temperature-adjusting unit 61 is also controlled by thecontrol unit CONT. When the liquid immersion area AR2 is formed on thesubstrate P, the liquid LQ, which is controlled to have the desiredtemperature, is supplied onto the substrate P by the liquid supplymechanism 10. It is not necessarily indispensable that the exposureapparatus EX is provided with the tank and the pressurizing pump of theliquid supply section 11 which may be replaced with the equipment of thefactory or the like in which the exposure apparatus EX is installed.

Valves 15, which open/close the flow passages of the supply tubes 13A,13B, are provided at intermediate positions of the supply tubes 13A, 13Brespectively. The operation for opening/closing the valves 15 iscontrolled by the control unit CONT. In this embodiment, the valves 15are the so-called normally closed system in which the flow passages ofthe supply tubes 13A, 13B are mechanically closed when the drivingsource (power source) of the exposure apparatus EX is stopped, forexample, due to the power failure.

The liquid recovery mechanism 20 recovers the liquid LQ on the imageplane side of the projection optical system PL. The liquid recoverymechanism 20 includes a liquid recovery section 21 which is capable ofrecovering the liquid LQ, and recovery tubes 23 (23A, 23B) each of whichhas one end connected to the liquid recovery section 21. The liquidrecovery section 21 includes, for example, a vacuum system (suctionunit) such as a vacuum pump, a gas/liquid separator for separating thegas from the recovered liquid LQ, and a tank for accommodating therecovered liquid LQ. As for the vacuum system, it is also allowable touse a vacuum system of the factory in which the exposure apparatus EX isinstalled, instead of providing the vacuum pump for the exposureapparatus EX. The liquid recovery operation of the liquid recoverysection 21 is controlled by the control unit CONT. In order to form theliquid immersion area AR2 on the substrate P, the liquid recoverymechanism 20 recovers a predetermined amount of the liquid LQ from thesurface of the substrate P supplied from the liquid supply mechanism 10.

A flow passage-forming member 70 is arranged in the vicinity of theoptical element 2 which makes contact with the liquid LQ and which isincluded in the plurality of optical elements for constructing theprojection optical system PL. The flow passage-forming member 70 is anannular member having the opening 70C (light-transmitting portion) whichis formed at the central portion of the flow passage-forming member 70.The optical element 2 is accommodated in the opening 70C. That is, theflow passage-forming member 70 is provided to surround the side surfaceof the optical element 2, over the substrate P (substrate stage PST). Agap is provided between the flow passage-forming member 70 and theoptical element 2. The flow passage-forming member 70 is supported by apredetermined support mechanism so that the flow passage-forming member70 is isolated from the optical element in terms of vibration.

The flow passage-forming member 70 can be formed of, for example,aluminum, titanium, stainless steel, duralumin, or any alloy containingthe above. Alternatively, the flow passage-forming member 70 may beformed of a transparent member (optical member) such as glass (silicaglass) having the light transmittance.

The flow passage-forming member 70 is provided with liquid supply ports12 (12A, 12B) which are provided over or above the substrate P(substrate stage PST) and which are arranged to be opposed to thesurface of the substrate P. In this embodiment, the flow passage-formingmember 70 has two liquid supply ports 12A, 12B. The liquid supply ports12A, 12B are provided on the lower surface 70A of the flowpassage-forming member 70.

The flow passage-forming member 70 has supply flow passages formedtherein to correspond to the liquid supply ports 12A, 12B. A pluralityof (two) supply tubes 13A, 13B are provided to correspond to the liquidsupply ports 12A, 12B and the supply flow passages. One end of each ofthe supply flow passages of the flow passage-forming member 70 isconnected to the liquid supply section 11 via each of the supply tubes13A, 13B. The other end is connected to each of the liquid supply ports12A, 12B.

Flow rate controllers 16 (16A, 16B), each of which is called “mass flowcontroller” and which control the liquid supply amounts per unit timewith respect to the liquid supply ports 12A, 12B respectively after theliquid is fed from the liquid supply section 11, are provided atintermediate positions of the two supply tubes 13A, 13B respectively.The flow rate controllers 16A, 16B control the liquid supply amountsunder the instruction signal fed from the control unit CONT.

The flow passage-forming member 70 further includes liquid recoveryports 22 (22A, 22B) which are provided over or above the substrate P(substrate stage PST) and which are arranged to be opposed to thesurface of the substrate P. In this embodiment, the flow passage-formingmember 70 has two liquid recovery ports 22A, 22B. The liquid recoveryports 22A, 22B are provided on the lower surface 70A of the flowpassage-forming member 70.

The flow passage-forming member 70 has recovery flow passages formedtherein to correspond to the liquid recovery ports 22A, 22B. A pluralityof (two) recovery tubes 23A, 23B are provided to correspond to theliquid recovery ports 22A, 22B and the recovery flow passages. One endof each of the recovery flow passages of the flow passage-forming member70 is connected to the liquid recovery section 21 via each of therecovery tubes 23A, 23B. The other end is connected to each of theliquid recovery ports 22A, 22B.

In this embodiment, the flow passage-forming member 70 constructs partsof the liquid supply mechanism 10 and the liquid recovery mechanism 20respectively. The liquid supply ports 12A, 12B, which construct theliquid supply mechanism 10, are provided at the positions on the bothsides in the X axis direction respectively while interposing theprojection area AR1 of the projection optical system PL. The liquidrecovery ports 22A, 22B, which construct the liquid recovery mechanism20, are provided outside the liquid supply ports 12A, 12B of the liquidsupply mechanism 10 in relation to the projection area AR1 of theprojection optical system PL. In this embodiment, the projection areaAR1 of the projection optical system PL is set to have a rectangularshape in a plan view in which the Y axis direction is the longitudinaldirection and the X axis direction is the transverse direction.

The operations of the liquid supply section 11 and the flow ratecontrollers 16 are controlled by the control unit CONT. When the liquidLQ is supplied onto the substrate P, then the control unit CONT feedsthe liquid LQ from the liquid supply section 11, and the liquid LQ issupplied onto the substrate P from the liquid supply ports 12A, 12Bprovided over the substrate P through the supply tubes 13A, 13B and thesupply flow passages. In this arrangement, the liquid supply ports 12A,12B are arranged on the both sides respectively with the projection areaAR1 of the projection optical system PL intervening therebetween. Theliquid LQ can be supplied from the both sides of the projection area AR1by the aid of the liquid supply ports 12A, 12B. The amounts per unittime of the liquid LQ to be supplied onto the substrate P from theliquid supply ports 12A, 12B respectively can be individually controlledby the flow rate controllers 16A, 16B provided for the supply tubes 13A,13B respectively.

The liquid recovery operation of the liquid recovery section 21 iscontrolled by the control unit CONT. The control unit CONT can controlthe liquid recovery amount per unit time brought about by the liquidrecovery section 21. The liquid LQ on the substrate P, recovered throughthe liquid recovery ports 22A, 22B provided over the substrate P, isrecovered by the liquid recovery section 21 through the recovery tubes23A, 23B and the recovery flow passages of the flow passage-formingmember 70.

In this embodiment, the supply tubes 13A, 13B are connected to oneliquid supply section 11. However, a plurality of (for example, two)liquid supply sections 11 may be provided corresponding to the number ofthe supply tubes, and the respective supply tubes 13A, 13B may beconnected to the plurality of liquid supply sections 11 respectively. Onthe other hand, the recovery tubes 23A, 23B are connected to one liquidrecovery section 21. However, a plurality of (for example, two) liquidrecovery sections 21 may be provided corresponding to the number of therecovery tubes, and the respective recovery tubes 23A, 23B may beconnected to the plurality of liquid recovery sections 21 respectively.

The liquid contact surface 2A of the optical element 2 of the projectionoptical system PL and the lower surface (liquid contact surface) 70A ofthe flow passage-forming member 70 have the lyophilicity orliquid-attracting property (hydrophilicity). In this embodiment, theliquid-attracting treatment is performed to the liquid contact surfacesof the optical element 2 and the flow passage-forming member 70. Theliquid contact surfaces of the optical element 2 and the flowpassage-forming member 70 have the liquid-attracting property owing tothe liquid-attracting treatment. In other words, at least the liquidcontact surfaces, which are included in the surfaces of the membersdisposed opposite to the exposure objective surface (surface) of thesubstrate P held by the substrate stage PST, are liquid-attractive. Inthis embodiment, the liquid LQ is water having the large polarity.Therefore, as for the liquid-attracting treatment (water-attracting orhydrophilic treatment), for example, a thin film is formed with asubstance such as alcohol having the molecular structure with the largepolarity. Accordingly, the liquid-attracting property is given to theliquid contact surfaces of the optical element 2 and the flowpassage-forming member 70. That is, it is desirable to adopt such atreatment that the substance having the molecular structure with thelarge polarity such as the OH group is provided on the liquid contactsurface, when water is used as the liquid LQ. Alternatively, aliquid-attracting material such as MgF₂, Al₂O₃, and SiO₂ may be providedon the liquid contact surface.

The lower surface (surface directed to the substrate P) 70A of the flowpassage-forming member 70 is a substantially flat surface, and the lowersurface (liquid contact surface) 2A of the optical element 2 is a flatsurface as well. The lower surface 70A of the flow passage-formingmember 70 is substantially flush with the lower surface 2A of theoptical element 2. Accordingly, the liquid immersion area AR2 can besatisfactorily formed in a wide range. It is not necessarilyindispensable that the lower surface 70A of the flow passage-formingmember 70 is substantially flush with the lower surface 2A of theoptical element 2. It is enough that the liquid immersion area is formedin a desired range.

The mechanism, which forms the liquid immersion area AR2 on the object(for example, the substrate P) opposed to the projection optical systemPL, is not limited to the mechanism described above. For example, it ispossible to use a mechanism disclosed in United States PatentPublication No. 2004/0207824, contents of which are incorporated hereinby reference within a range of permission of the domestic laws andordinances of the state designated or selected in this internationalapplication.

A vibration sensor (for example, an acceleration sensor) is provided forthe projection optical system PL and/or the flow passage-forming member70. It is possible to monitor the vibration of the projection opticalsystem PL which may be generated due to the contact with the liquid LQand/or the vibration of the flow passage-forming member 70 which may begenerated when the liquid LQ is recovered.

FIG. 2 shows the temperature adjustment system 60 which performs thetemperature adjustment for the substrate holder PH. With reference toFIG. 2, the temperature adjustment system 60 includes the liquidtemperature-adjusting unit 61 which adjusts the temperature of theliquid LQ supplied from the liquid supply section 11 to be apredetermined temperature, and a temperature-adjusting flow passage 62which is formed in the substrate holder PH and through which the liquidLQ supplied from the liquid temperature-adjusting unit 61 flows. One endof the temperature-adjusting flow passage 62 is connected to the liquidtemperature-adjusting unit 61 via a supply flow passage 63 and aninternal flow passage 63′ which is formed in the Z stage 52. The otherend of the temperature-adjusting flow passage 62 is connected to theliquid recovery section 21 via a recovery flow passage 64 and aninternal flow passage 64′ which is formed in the Z stage 52. The liquidLQ, which is subjected to the temperature adjustment by the liquidtemperature-adjusting unit 61, is supplied to the temperature-adjustingflow passage 62 via the supply flow passage 63 and the internal flowpassage 63′, and the liquid LQ is allowed to flow through thetemperature-adjusting flow passage 62. The liquid temperature-adjustingunit 61 includes therein a heater and a temperature sensor. The liquidtemperature-adjusting unit 61 is controlled on the basis of the controlsignal supplied from the control unit. The temperature of the liquid LQis not specifically limited. However, the temperature of the liquid LQis regulated or adjusted to about 23° C.±0.01 which is approximately thesame as the temperature in the chamber in which, for example, theprojection optical system PL and the substrate stage PST areaccommodated. The substrate holder PH is adjusted to have a desiredtemperature, for example, the same temperature as that of the adjustedliquid LQ, by the aid of the liquid LQ allowed to flow through thetemperature-adjusting flow passage 62.

The temperature-adjusting flow passage 62 is provided to have a helicalform or a wavy form as viewed in a plan view in the Z direction. Thetemperature-adjusting flow passage 62 is capable of adjusting thesubstrate holder PH to have an approximately uniform temperature. Thisembodiment has been explained such that one temperature-adjusting flowpassage 62 is provided. However, it is also allowable to provide aplurality of temperature-adjusting flow passages 62 for the substrateholder PH. This embodiment has been explained such that thetemperature-adjusting flow passage 62 is formed in the substrate holderPH. However, the temperature-adjusting flow passage 62 may be providedunder or below the substrate holder PH (on the contact surface betweenthe substrate holder PH and the Z stage 52) or in the Z stage 52.Alternatively, a tube member, which forms the temperature-adjusting flowpassage 62, may be provided on the circumference of the side surface ofthe substrate holder PH. Further alternatively, thetemperature-adjusting flow passage 62 may be provided at any position onthe upper surface of the substrate holder PH provided that the position,at which the temperature-adjusting flow passage 62 is provided, does notinhibit the holding of the substrate P.

The substrate holder PH is preferably formed of a material having a highcoefficient of thermal conductivity so that the substrate holder PH issubjected to the temperature control in accordance with the temperatureof the liquid allowed to flow through the temperature-adjusting flowpassage 62. The substrate holder PH may be formed of, for example,aluminum, titanium, stainless steel, duralumin, or any alloy containingthe above. A plurality of pin-shaped projections are formed on the uppersurface of the substrate holder PH in order to hold the substrate P. Inthis embodiment, the substrate P is formed of silicon carbide (SiC)having a high coefficient of thermal conductivity. Therefore, thesubstrate P, which is held by the substrate holder PH, can be regardedto have approximately the same temperature as the temperature of thesubstrate holder PH. The temperature of the substrate P can be adjustedby adjusting the temperature of the substrate holder PH.

The supply flow passage 63, which connects the liquidtemperature-adjusting unit 61 and the internal flow passage 63′, can beconstructed, for example, with a flexible tube which is elasticallydeformable in accordance with the movement of the substrate stage PST.The recovery flow passage 64, which connects the liquid recovery section21 and the internal flow passage 64′, can be also constructed with aflexible tube.

In this embodiment, the temperature adjustment system 60 performs thetemperature adjustment for the substrate holder PH by using a liquid LQwhich is same as the liquid LQ to be supplied onto the substrate P. Thetemperature adjustment system 60 uses the temperature-adjusted liquid LQto perform the temperature adjustment for the substrate holder PH andperform the temperature adjustment for the liquid LQ for the liquidimmersion exposure to be supplied onto the substrate P as well.Accordingly, the structure of the apparatus is simplified, and thetemperature change can be suppressed for the substrate P to make contactwith the liquid LQ and for the liquid LQ to make contact with thesubstrate P respectively. Further, approximately the same temperaturecan be ensured for the substrate holder PH, the substrate P held by thesubstrate holder PH, and the liquid LQ to make contact with thesubstrate P.

The temperature adjustment system 60 can also perform the temperatureadjustment for the plate member 50 which forms the flat surface (uppersurface) 51 around the substrate P. As shown in FIG. 2, atemperature-adjusting flow passage 65 is provided in the inside of the Zstage 52 disposed below the plate member 50. The temperature-adjustedliquid LQ, which is supplied from the liquid temperature-adjusting unit61, is allowed to flow through the temperature-adjusting flow passage65. Accordingly, the temperature of the plate member 50 is adjusted. Thetemperature-adjusting flow passage 65 may be provided in the platemember 50 and/or around the plate member 50. Further, atemperature-adjusting flow passage 66 is also provided in the referencemember 300 or around (or below) the reference member 300. The referencemember 300 is subjected to the temperature adjustment by the liquid LQwhich is supplied from the liquid temperature-adjusting unit 61 andwhich is allowed to flow through the temperature-adjusting flow passage66. The temperature-adjusting flow passages 65, 66 may be provided atany position on the members 50, 300 respectively, provided that theposition does not inhibit the measurement process and the exposureprocess. Accordingly, even when the liquid immersion area AR2 is formedon the plate member 50 and/or the reference member 300, the temperaturechange is suppressed for the plate member 50, the reference member 300,and the liquid LQ respectively by controlling the temperatures of theplate member 50 and the reference member 300 as described above. Thetemperature of the plate member 50 can be made approximately identicalwith the temperature of the liquid LQ, and/or the temperature of thereference member 300 can be made approximately identical with thetemperature of the liquid LQ.

Temperature sensors 80, which measures the temperature of the substrateholder PH, are provided at a plurality of predetermined positions of theupper surface of the substrate holder PH respectively. As describedabove, the substrate holder PH can be regarded to have approximately thesame temperature as that of the substrate P. Therefore, the temperaturesensors 80, which are provided on the upper surface of the substrateholder PH, can also measure the temperature of the substrate P held bythe substrate holder PH. The result of the temperature measurementperformed by the temperature sensors 80 is outputted to the control unitCONT. The result of the measurement performed by the temperature sensors80 is used, for example, for the temperature control of the liquid LQ bythe liquid temperature-adjusting unit 61. In this arrangement, thecontrol unit CONT can control the liquid temperature-adjusting unit 61,for example, such that the difference is decreased between themeasurement result of the temperature sensors 80 and the temperature ofthe liquid to be supplied onto the substrate P.

When it is impossible to regard that the temperature of the substrateholder PH is the same as the temperature of the substrate P, then thetemperature of the substrate holder PH may be measured with thetemperature sensors 80, and the temperature of the substrate P to makecontact with the liquid LQ may be estimated on the basis of themeasurement result. Of course, the temperature sensors 80 may bearranged at positions at which the temperature of the substrate P can bedirectly measured.

The temperature of the substrate P may be estimated, for example, on thebasis of any experiment and/or any simulation, instead of providing thetemperature sensors 80.

Temperature sensors 81, which measure the temperature of the liquid LQsupplied from the liquid supply ports 12A, 12B to the image plane sideof the projection optical system PL, are provided in the vicinity of theliquid supply ports 12A, 12B of the flow passage-forming member 70respectively. The result of the temperature measurement performed by thetemperature sensors 81 is outputted to the control unit CONT. The resultof the measurement performed by the temperature sensors 81 is used, forexample, for the temperature control of the liquid LQ by the liquidtemperature-adjusting unit 61. In this arrangement, for example, thecontrol unit CONT can compare the result of the measurement performed bythe temperature sensors 81 with the preset temperature of the liquid tocontrol the liquid temperature-adjusting unit 61 so that the differencebetween these temperatures is decreased. It is enough that thetemperature sensors 81 are arranged at the positions at which thetemperature of the liquid LQ supplied to the image plane side of theprojection optical system PL can be measured. The temperature sensors 81can be provided at arbitrary positions of the flow passage-formingmember 70 and/or the optical element 2, for example, provided that thetemperature sensors 81 make contact with the liquid LQ at the positions.Alternatively, the temperature sensors 81 may be provided atintermediate positions of the supply tubes and/or the recovery tubes andthe flow passages in the flow passage-forming member 70.

Further, a temperature sensor 82, which measures the temperature of thereference member 300, is provided at a predetermined position of thereference member 300. In this embodiment, the temperature sensor 82 isprovided at the position on the upper surface 301A of the referencemember 300 at which the measuring operation for the reference marks MFM,PFM or the like is not inhibited. The temperature sensor 82 can beprovided at any arbitrary position provided that the temperature of thereference member 300 can be measured at the position. The result of thetemperature measurement performed by the temperature sensor 82 is alsooutputted to the control unit CONT. The measurement result of thetemperature sensor 82 is used, for example, for the temperature controlof the liquid LQ by the liquid temperature-adjusting unit 61 when theliquid immersion area AR2 is formed on the reference member 300. In thisarrangement, for example, the control unit CONT can control the liquidtemperature-adjusting unit 61 so that the difference between themeasured value obtained by the temperature sensor 82 and the temperatureof the liquid LQ to be supplied onto the reference member 300 isdecreased.

The temperature of the reference member 300 may be estimated, forexample, on the basis of any experiment and/or any simulation, insteadof providing the temperature sensor 82.

FIG. 3 shows a plan view, as viewed from an upper position, illustratingthe substrate stage PST which is movable while holding the substrate P.With reference to FIG. 3, movement mirrors 42 are arranged at two edgeportions of the substrate stage PST which is rectangular as viewed in aplan view, the two edge portions being perpendicular to each other.

The upper surface 51 of the substrate stage PST is subjected to theliquid-repelling treatment to have the liquid-repelling property. Thoseadoptable as the liquid-repelling treatment for the upper surface 51include, for example, the coating with a liquid-repelling material suchas fluorine-based resin materials and acrylic resin materials, and thesticking of a thin film formed of the liquid-repelling material asdescribed above. A material, which is insoluble in the liquid LQ, isused as the liquid-repelling material to provide the liquid repellence.A part or all of the substrate stage PST may be formed of, for example,a material having the liquid repellence represented by fluorine-basedresins such as polytetrafluoroethylene (Teflon (trade name)). The platemember 50 may be formed of a material having the liquid repellence suchas polytetrafluoroethylene as described above.

The reference member 300 is arranged at the predetermined positionoutside the substrate P on the substrate stage PST. A reference mark PFMto be detected by the substrate alignment system 350 (FIG. 1) and areference mark MFM to be detected by the mask alignment system 360(FIG. 1) are provided in a predetermined positional relationship on thereference member 300. An upper surface 301A of the reference member 300is a substantially flat surface. The upper surface 301A of the referencemember 300 is provided to have approximately the same height as those of(to be flush with) the upper surface 51 of the plate member 50 and thesurface of the substrate P held by the substrate stage PST. The uppersurface 301A of the reference member 300 can also play a role as thereference surface for the focus-detecting system 30. The reference markPFM and the reference mark MFM may be provided on separate members to bearranged on the substrate stage PST.

The substrate alignment system 350 also detects the alignment marks 1formed on the substrate P. As shown in FIG. 3, a plurality of shot areasS1 to S24 are formed on the substrate P. The plurality of alignmentmarks 1 are provided on the substrate P corresponding to the pluralityof shot areas S1 to S24. In FIG. 3, the respective shot areas aredepicted so that they are adjacent to one another. However, therespective shot areas are actually separated from each other. Thealignment marks 1 are provided on scribe lines as separation areastherebetween.

An uneven illuminance sensor 400, which is as disclosed, for example, inJapanese Patent Application Laid-open No. 57-117238, is arranged as ameasuring sensor at a predetermined position outside the substrate P onthe substrate stage PST. The uneven illuminance sensor 400 is providedwith an upper plate 401 which is rectangular as viewed in a plan view.The upper surface 401A of the upper plate 401 is a substantially flatsurface. The upper surface 401A of the upper plate 401 is provided tohave approximately the same height as those of (to be flush with) theupper surface 51 of the plate member 50 and the surface of the substrateP held by the substrate stage PST. A pinhole 470, through which thelight beam is transmissive, is provided through the upper surface 401Aof the upper plate 401. Portions of the upper surface 401A except forthe pinhole 470 are covered with a light-shielding material such aschromium.

A spatial image-measuring sensor 500, which is as disclosed, forexample, in Japanese Patent Application Laid-open No. 2002-14005, isprovided as a measuring sensor at a predetermined position outside thesubstrate P on the substrate stage PST. The spatial image-measuringsensor 500 is provided with an upper plate 501 which is rectangular asviewed in a plan view. The upper surface 501A of the upper plate 501 isa substantially flat surface. The upper surface 501A of the upper plate501 is provided to have approximately the same height as those of (to beflush with) the upper surface 51 of the plate member 50 and the surfaceof the substrate P held by the substrate stage PST. A slit 570, throughwhich the light beam is passable, is provided through the upper surface501A of the upper plate 501. Portions of the upper surface 501A exceptfor the slit 570 are covered with a light-shielding material such aschromium.

Although not shown, a radiation amount sensor (illuminance sensor),which is as disclosed, for example, in Japanese Patent ApplicationLaid-open No. 11-16816, is also provided on the substrate stage PST. Theupper surface of the upper plate of the radiation amount sensor isprovided to have approximately the same height as those of (to be flushwith) the upper surface 51 of the plate member 50 and the surface of thesubstrate P held by the substrate stage PST.

As described above, each of the upper surface 301A of the referencemember 300, the upper surface 401A of the uneven illuminance sensor 400,and the upper surface 501A of the spatial image-measuring sensor 500forms a part of the upper surface of the substrate stage PST. Thesubstrate stage PST, which holds the substrate P, has approximately thesame height (to be flush).

The reference member 300 and the upper plates 401, 501 or the like aredetachable (exchangeable) with respect to the substrate stage PST.Further, the temperatures of the upper plates 401, 501 are also adjustedby the temperature adjustment system 60.

It is not necessarily indispensable that all of the measuring memberssuch as the reference member 300 and the sensors 400, 500 are providedin the substrate stage PST as described above. At least a part or partsof them may be omitted. The measuring member, which is to be provided inthe substrate stage PST, is not limited to those described above. It isalso possible to provide, for example, a sensor for measuring thewavefront aberration of the projection optical system PL, if necessary.Of course, it is also allowable that no measuring member is provided inthe substrate stage PST at all.

FIG. 4(a) shows a sectional view illustrating the uneven illuminancesensor 400, and FIG. 4(b) shows a plan view illustrating the unevenilluminance sensor 400 as viewed from an upper position. With referenceto FIGS. 4(a) and 4(b), the uneven illuminance sensor 400 includes anupper plate 401 which is formed of silica glass or the like, and anoptical element 402 which is formed of silica glass or the like providedbelow the upper plate 401. In this embodiment, the upper plate 401 andthe optical element 402 are provided as an integrated body. In thefollowing description, the upper plate 401 and the optical element 402will be appropriately referred to as “optical member 404” incombination. The upper plate 401 and the optical element 402 aresupported on the Z stage 52 by the aid of a support portion 403. Thesupport portion 403 has a continuous wall portion to surround theoptical member 404. The uneven illuminance sensor 400 is arranged in anopening 50L provided for the plate member 50, and the upper surface 401Ais exposed. The optical member 404, which includes the upper plate 401and the optical element 402, is detachable and exchangeable with respectto the Z stage 52.

The pinhole 470, through which the light beam is passable, is providedon the upper plate 401. A thin film 460, which contains alight-shielding material such as chromium, is provided at portions ofthe upper plate 401 except for the pinhole 470. In this embodiment, anoptical member, which is formed of silica glass, is also provided in thepinhole 470. Accordingly, the thin film 460 is flush with the pinhole470, and the upper surface 401A is the flat surface. A film 401B, whichis formed of a liquid-repelling material, is provided on parts of theupper surface 401A and the support portion 403.

It is also allowable that a part of the optical member is not providedin the pinhole 470 provided that the surface of the film 401B issubstantially flush. The upper plate 401 may be omitted, and the thinfilm 460 may be directly formed on the optical element 402.

An optical sensor 450, which receives the light beam passed through thepinhole 470, is arranged below the optical member 404. The opticalsensor 450 is attached on the Z stage 52. The optical sensor 450 outputsthe light-receiving signal to the control unit CONT. In thisarrangement, a space 405, which is surrounded by the support portion403, the Z stage 52, and the optical member 404, is a substantiallytightly closed space. The liquid LQ does not inflow into the space 405.An optical system (optical element) may be arranged between the opticalmember 404 and the optical sensor 450.

A predetermined gap is provided between the opening 50L and the unevenilluminance sensor 400 including the optical member 404 and the supportportion 403. The upper surface 401A of the uneven illuminance sensor 400is a substantially flat surface. The upper surface 401A of the unevenilluminance sensor 400 is provided to have approximately the same heightas those of (to be flush with) the upper surface 51 of the plate member50 and the surface of the substrate P.

The portion of the plate member 50, which is disposed in the vicinity ofthe uneven illuminance sensor 400, is thinned. The end portion of athin-walled portion 50S subjected to the thinning, which is disposed onthe side of the uneven illuminance sensor 400, is bent downwardly toform a bent portion 50T. A wall portion 310, which protrudes upwardly,is formed for the Z stage 52. The wall portion 310 is provided outsidethe bent portion 50T with respect to the uneven illuminance sensor 400.The wall portion 310 is formed continuously to surround the unevenilluminance sensor 400 (including the bent portion 50T).

A tube member, which constructs a temperature-adjusting flow passage 67,is provided to be wound around the side surface of the optical member404. The temperature-adjusted liquid LQ, which is supplied from theliquid temperature-adjusting unit 61, is flowed through thetemperature-adjusting flow passage 67, and thus the temperature of theoptical member 404 is adjusted. The temperature of the liquid LQ can bemade substantially the same as the temperature of the optical member 404by controlling the temperature of the optical member 404 as describedabove even when the liquid immersion area AR2 is formed on the opticalmember 404.

A temperature sensor 83, which measures the temperature of the opticalmember 404, is provided at a predetermined position of the opticalmember 404. In this embodiment, the temperature sensor 83 is provided onthe side surface of the optical member 404. However, the temperaturesensor 83 may be provided at any arbitrary position provided that thetemperature can be measured at the position. The result of themeasurement of the temperature performed by the temperature sensor 83 isoutputted to the control unit CONT. The measurement result obtained bythe temperature sensor 83 is used, for example, for the temperaturecontrol of the liquid LQ by the liquid temperature-adjusting unit 61when the liquid immersion area AR2 is formed on the optical member 404.In this arrangement, the control unit CONT can control the temperatureadjustment for the liquid LQ by the liquid temperature-adjusting unit 61so that the difference is decreased between the measurement resultobtained by the temperature sensor 83 and the temperature of the liquidLQ to be supplied onto the optical member 404.

The temperature of the optical member 404 may be estimated, for example,on the basis of the result of any experiment and/or any simulation,without providing the temperature sensors 83.

The spatial image-measuring sensor 500 is basically constructedsubstantially equivalently to the uneven illuminance sensor 400.Therefore, any detailed explanation thereof will be omitted. However, atemperature-adjusting flow passage is also provided on the side surfaceof an upper plate (optical member) 501 for constructing the spatialimage-measuring sensor 500. The temperature-adjusted liquid LQ is madeto flow through the temperature-adjusting flow passage, and thus thetemperature is adjusted for the upper plate 501 which constructs thespatial image-measuring sensor. Similarly, the temperature is alsoadjusted for the upper plate which constructs the uneven illuminancesensor, by the liquid LQ made to flow through the temperature-adjustingflow passage. A tube member, which forms the temperature-adjusting flowpassage, may be wound around the side surface of the reference member300 to adjust the temperature of the reference member 300 in the samemanner as in the uneven illuminance sensor 400. Similarly, a temperaturesensor, which measures the temperature of each of the optical members,is arranged for each of the spatial image-measuring sensor 500 and theunillustrated illuminance sensor. The measurement result obtainedthereby is outputted to the control unit CONT. The measurement resultobtained by each of the temperature sensors is used, for example, forthe control of the temperature of the liquid by the liquidtemperature-adjusting unit 61.

In the arrangement explained above, the temperature adjustment isperformed for all of the measuring members (reference member 300, unevenilluminance sensor 400, spatial image-measuring sensor 500) provided inthe substrate stage PST. However, it is also allowable to omit thetemperature adjustment for at least a part or parts of the measuringmembers.

The temperature adjustment system 60 can also perform the temperatureadjustment for the optical element 2 which makes contact with the liquidLQ and which is included in the plurality of optical elements forconstructing the projection optical system PL. As shown in FIG. 5, thetemperature adjustment system 60 includes a tube member for forming atemperature-adjusting flow passage 68 provided to be wound around theside surface of the optical element 2. The temperature-adjusted liquidLQ, which is supplied from the liquid temperature-adjusting unit 61, isallowed to flow through the temperature-adjusting flow passage 68. Theoptical element 2 is subjected to the temperature adjustment by theliquid LQ made to flow through the temperature-adjusting flow passage68. The temperature change can be suppressed for the optical element 2and the liquid LQ respectively by controlling the temperature of theoptical element 2 as described above when the liquid immersion area AR2is formed on the image plane side of the projection optical system PL.Further, the temperature of the optical element 2 can be madesubstantially the same as the temperature of the liquid LQ.

A temperature sensor 84, which measures the temperature of the opticalelement 2, is provided at a predetermined position of the opticalelement 2. In this embodiment, the temperature sensor 84 is provided onthe side surface of the optical element 2. However, the temperaturesensor 84 can be provided at any arbitrary position provided that thetemperature of the optical element 2 can be measured at the position.The temperature measurement result of the temperature sensor 84 is alsooutputted to the control unit CONT. The measurement result of thetemperature sensor 84 is used for the temperature adjustment for theliquid LQ by the liquid temperature-adjusting unit 61.

As described above, in this embodiment, the temperature of the liquid LQis adjusted, and the temperature adjustment is performed for the object(for example, substrate P, reference member 300, optical element 2) tomake contact with the liquid LQ. Accordingly, the temperature of theobject (for example, substrate P, reference member 300, optical element2) to make contact with the liquid LQ can be made substantially the sameas the temperature of the liquid LQ. Further, it is possible to suppressnot only the temperature change of the liquid LQ but also thetemperature change and the thermal deformation of the object (forexample, substrate P, reference member 300, optical element 2) to makecontact with the liquid LQ.

In this embodiment, the temperature adjustment system 60 performs thetemperature adjustment for the substrate holder PH, the reference member300, and/or the optical element 2 by using the liquid LQ supplied fromone liquid temperature-adjusting unit 61. Alternatively, at least oneliquid temperature-adjusting unit may be provided separately from theliquid temperature-adjusting unit 61 which performs the temperatureadjustment for the liquid LQ to be supplied to the image plane side ofthe projection optical system PL. For example, the liquid LQ foreffecting the temperature adjustment for the optical element 2 and theliquid LQ for effecting the temperature adjustment for the substrateholder PH may be supplied from the mutually distinct liquidtemperature-adjusting units respectively. That is, the temperatures of,for example, the substrate P (substrate holder PH), the liquid LQ, thereference member 300, and the optical element 2 can be independentlycontrolled by using the individual liquid temperature-adjusting units.In this arrangement, the temperatures of, for example, the substrate P(substrate holder PH), the liquid LQ, the reference member 300, and theoptical element 2 can be adjusted respectively depending on thetemperature of the liquid LQ to be supplied to the image plane side ofthe projection optical system PL. Accordingly, it is possible to avoidthe occurrence of the temperature change and the temperaturedistribution in the liquid LQ which would be otherwise caused by thecontact with, for example, the substrate P, the reference member 300,and the optical element. Further, it is also possible to avoid thetemperature change and the thermal deformation of, for example, thesubstrate P, the reference member 300, and the optical element 2 whichwould be otherwise caused by the contact with the liquid LQ. Thetemperature adjustment, which is effected, for example, for thesubstrate P (substrate holder PH), the reference member 300, and theoptical element 2, is not limited to the arrangement or system in whichthe liquid is used. The temperature adjustment may be effected by usinga predetermined temperature-adjusting means (for example, heater orPeltier element) other than the arrangement or system in which theliquid LQ is used.

Next, an explanation will be made with reference to a flow chart shownin FIG. 6 about a method for exposing the substrate P with the image ofthe pattern of the mask M by using the exposure apparatus EX constructedas described above.

At first, the temperature adjustment is performed for the substrate Pbefore the substrate P is loaded on the substrate stage PST which ismovable while holding the substrate (Step SA1).

Specifically, as shown in FIG. 7, the substrate P as the exposureprocess objective is transported onto a temperature-adjusting holder 90which constitutes a part of the temperature adjustment system 60, by atransport system H from a pretreatment unit such as a coater unit forcoating the substrate P with a resist. The temperature-adjusting holder90 is provided between the substrate stage PST and the pretreatment unitsuch as the coater unit. The temperature-adjusting holder 90 adjusts thetemperature of the held substrate P. In this embodiment, atemperature-adjusting flow passage 69, through which the liquid LQsupplied from the liquid temperature-adjusting unit 61 is made to flow,is formed in the temperature-adjusting holder 90. The substrate P, whichis held by the temperature-adjusting holder 90, is adjusted to have thetemperature corresponding to the temperature of the liquid LQ to besupplied onto the substrate P during the liquid immersion exposure,specifically, approximately the same temperature as that of the liquidLQ. Accordingly, even when the liquid LQ is supplied after the substrateP is placed on the substrate stage PST (substrate holder PH), the heatexchange is suppressed between the liquid LQ and the substrate P. It ispossible to avoid the temperature change of the liquid LQ as well as thetemperature change and the thermal deformation of the substrate P. Inthis embodiment, the substrate holder PH is also subjected to thetemperature control with the liquid LQ supplied from the liquidtemperature-adjusting unit 61. Therefore, it is also possible to avoidthe temperature change and the thermal deformation of the substrate Pwhen the substrate P is placed on the substrate holder PH. The liquid,which is used for the temperature-adjusting holder 90, may be suppliedfrom a temperature-adjusting unit which is distinct from the liquidtemperature-adjusting unit 61. Alternatively, the temperature adjustmentmay be performed for the substrate P in accordance with another systemin which the liquid is not used. For example, the temperature adjustmentmay be performed with a temperature-adjusted gas in place of the liquid.In this arrangement, the temperature-adjusted gas may be supplied to thetemperature-adjusting flow passage 69 provided in thetemperature-adjusting holder 90. Alternatively, the temperature-adjustedgas may be directly blown against the temperature-adjusting holder 90 orthe substrate P. Another temperature adjustment system may also beadopted, in which the temperature adjustment is performed for thetemperature-adjusting holder 90 by using a contact type heater of theheat transfer system or a non-contact type heater using the heatradiation.

When the temperature-adjusting holder 90 uses any temperature-adjustingunit which is distinct from the liquid temperature-adjusting unit 61 orany temperature-adjusting mechanism in which the liquid is not used, thetemperature adjustment is also performed for the substrate P on thetemperature-adjusting holder 90 in consideration of the temperature ofthe liquid LQ to be supplied onto the substrate P and the temperature ofthe substrate holder PH. For example, when the temperature sensor 81 formeasuring the temperature of the liquid LQ and/or the temperature sensor80 for measuring the temperature of the substrate holder PH is provided,it is possible to control the temperature adjustment for the substrate Pon the temperature-adjusting holder 90 on the basis of the measurementresult obtained thereby. Accordingly, it is possible to suppress thetemperature change of the liquid LQ which makes contact with thesubstrate P as well as the temperature change and the thermaldeformation of the substrate P.

The control unit CONT uses a predetermined transport system to exportthe substrate P from the temperature-adjusting holder 90 and import(load) the substrate P into (on) the substrate stage PST after thetemperature of the substrate P is subjected to the temperatureadjustment with the temperature-adjusting holder 90 before starting theexposure for the substrate P (Step SA2).

After the substrate P is loaded on the substrate stage PST, themeasurement process and the alignment process for the substrate P areperformed (Step SA3).

The temperature adjustment is also performed for the liquid LQ by thetemperature adjustment system 60 during the measurement process andduring the alignment process.

In the measurement process, the control unit CONT supplies and recoversthe liquid LQ by using the liquid supply mechanism 10 and the liquidrecovery mechanism 20, for example, in a state in which the projectionoptical system PL is opposed to the upper plate 401 of the unevenilluminance sensor 400 to form the liquid immersion area of the liquidLQ between the optical element 2 disposed at the end portion of theprojection optical system PL and the upper surface 401A of the upperplate 401.

The control unit CONT radiates the exposure light beam EL from theillumination optical system IL in a state in which the liquid LQ isallowed to make contact with the optical element 2 of the projectionoptical system PL and the upper surface 401A of the upper plate 401 todetect the illuminance distribution of the exposure light beam EL in theprojection area AR1 by the uneven illuminance sensor 400 via theprojection optical system PL and the liquid LQ. That is, the pinhole 470of the uneven illuminance sensor 400 is successively moved to aplurality of positions in the radiation area (projection area)irradiated with the exposure light beam EL in the state in which theliquid immersion area of the liquid LQ is formed on the upper surface401A of the uneven illuminance sensor 400. The control unit CONTappropriately corrects the illuminance distribution of the exposurelight beam EL so that the illuminance distribution of the exposure lightbeam EL is in a desired state in the projection area AR1 of theprojection optical system PL, on the basis of the result of thedetection performed by the uneven illuminance sensor 400.

In this process, the temperature adjustment system 60 performs thetemperature adjustment for the upper plate 401 and the optical element 2through which the exposure light beam EL passes in the state in whichthe upper plate 401 and the optical element 2 make contact with theliquid LQ. Specifically, the temperature adjustment system 60 performsthe temperature adjustment so that any temperature change is not causedin the optical element 2 and the upper plate 401 for forming the flatsurface 401A. Further, the temperature adjustment system 60 performs thetemperature adjustment for the upper plate 401 in order to suppress thetemperature change of the liquid LQ on the flat surface 401A.

The temperature of the optical element 2 is measured by the temperaturesensor 84 during the measurement performed by the uneven illuminancesensor 400 through the liquid LQ. The result of the measurement isoutputted to the control unit CONT. Similarly, the temperature of theupper plate 401 is measured by the temperature sensor 83, and thetemperature of the liquid LQ on the upper plate 401 is measured by thetemperature sensor 81. The measurement results obtained by thetemperature sensors 81, 83, 84 are outputted to the control unit CONT.The control unit CONT performs the temperature adjustment on the basisof the measurement results obtained by the temperature sensors so thatapproximately the same temperature is ensured for the liquid LQ, theoptical element 2, and the upper plate 401 in order to suppress thetemperature change of the upper plate 401, the optical element 2, and/orthe liquid LQ. For example, the control unit CONT adjusts the liquidsupply amount per unit time and/or the temperature of the liquid LQ tobe supplied from the liquid temperature-adjusting unit 61 to each of thetemperature-adjusting flow passage 67 for effecting the temperatureadjustment for the upper plate 401 and the temperature-adjusting flowpassage 68 for effecting the temperature adjustment for the opticalelement 2, on the basis of the measurement results obtained by thetemperature sensors respectively.

When any difference appears between the temperature of the opticalelement 2 and the temperature of the upper plate 401 which makes contactwith the liquid LQ, and/or when any difference appears between thetemperature of the liquid LQ and the temperature of the upper plate 401or the optical element 2, then the heat exchange (heat transfer) iseffected therebetween. As a result, any temperature distribution appearsand/or any temperature change appears in the liquid LQ with which thespace between the upper plate 401 and the optical element 2 is filled.There is also such a possibility that the upper plate 401 and/or theoptical element 2 may undergo the temperature change. In such asituation, there is a possibility such that the measurement accuracy maybe deteriorated by the temperature change when the illuminancedistribution of the exposure light beam EL is measured. Accordingly, thetemperature adjustment system 60 is used to effect the temperatureadjustment to prevent any temperature change from arising for theoptical element 2, the upper plate 401, and the liquid LQ. Thus, it ispossible to avoid the deterioration of the measurement accuracy.

There is also such a possibility that the temperature of the liquid LQsupplied from the liquid temperature-adjusting unit 61 may be slightlychanged with time. Also in such a situation, the temperaturedistribution and the temperature change arise for the liquid LQ withwhich the space between the upper plate 401 and the optical element 2 isfilled. Accordingly, the temperature adjustment system 60 performs thetemperature adjustment for the optical element 2 and the upper plate 401depending on the temperature of the liquid LQ to be supplied onto theupper plate 401 (on the basis of the result of the measurement performedby the temperature sensor). Thus, it is possible to avoid theinconvenience of the occurrence of the temperature distribution in theliquid LQ.

After the completion of the detection of the illuminance distribution ofthe exposure light beam EL, the control unit CONT uses the liquidrecovery mechanism 20 to recover the liquid LQ of the liquid immersionarea AR2 formed on the upper surface 401A of the upper plate 401 of theuneven illuminance sensor 400.

The explanation has been made such that the temperature adjustment isperformed by the temperature adjustment system 60 during the measurementthrough the liquid LQ by using the uneven illuminance sensor 400.However, it is of course possible to adjust the temperatures of theoptical element 2 and the upper plate 401 before the measurement processthrough the liquid LQ by using the uneven illuminance sensor 400. Afterwaiting for the arrival at the desired temperature of the opticalelement 2, the upper plate 401, and/or the liquid LQ, the measurementprocess may be performed through the liquid LQ by using the unevenilluminance sensor 400.

The explanation has been made above about the measuring operation withthe uneven illuminance sensor 400. The temperature adjustment is alsoperformed by the temperature adjustment system 60 in the same manner asdescribed above during the measuring operation and before the measuringoperation through the liquid LQ by using the spatial image-measuringsensor 500 and the illuminance sensor.

Subsequently, the baseline amount is measured, as performed in one ofthe procedures of the measurement process. The baseline amount indicatesthe positional relationship between the projection position of the imageof the pattern and the detection reference position of the substratealignment system 350 in the coordinate system defined by the laserinterferometer. At first, the control unit CONT moves the XY stage 53(FIG. 1) so that the detection area of the substrate alignment system350 is positioned on the reference member 300. Before the substratealignment system 350 detects the reference mark PFM on the referencemember 300, the temperature adjustment system 60 allows the liquid LQ toflow, for example, through the temperature-adjusting flow passage 66 andthe temperature-adjusting flow passage 65 so that the temperatureadjustment is effected for the upper surface of the substrate stage PSTincluding the reference member 300.

When the reference mark PFM on the reference member 300 is detected bythe substrate alignment system 350, as shown in FIG. 8, the control unitCONT detects the reference mark PFM on the reference member 300 havingbeen subjected to the temperature adjustment, by using the substratealignment system 350 not through the liquid LQ (in the dry state) todetect the position information of the reference mark PFM in thecoordinate system defined by the laser interferometer 43 (FIG. 1).Accordingly, the detection reference position of the substrate alignmentsystem 350 in the coordinate system defined by the laser interferometer43 is detected by using the reference mark PFM.

The temperature adjustment system 60 may perform the temperatureadjustment for the reference member 300 by allowing the liquid LQ toflow, for example, through the temperature-adjusting flow passage 65 andthe temperature-adjusting flow passage 66 so that the temperature changeof the reference member 300 is not caused during the detecting operationperformed by the substrate alignment system 350 as well.

Subsequently, the control unit CONT detects the reference mark MFM onthe reference member 300 by the mask alignment system 360. When thereference mark MFM is detected, the control unit CONT moves the XY stage53 so that the end portion of the projection optical system PL isopposed to the reference member 300. The control unit CONT supplies andrecovers the liquid LQ by the liquid supply mechanism 10 and the liquidrecovery mechanism 20 so that the space between the optical element 2disposed at the end portion of the projection optical system PL and theupper surface 301A of the reference member 300 is filled with the liquidLQ to form the liquid immersion area.

The temperature adjustment system 60 performs the temperature adjustmentfor the upper surface of the substrate stage PST including the referencemember 300 by allowing the liquid LQ to flow, for example, through thetemperature-adjusting flow passage 66 and the temperature-adjusting flowpassage 65 before the mask alignment system 360 detects the referencemark MFM on the reference member 300. Similarly, the temperatureadjustment system 60 performs the temperature adjustment for the opticalelement 2 of the projection optical system PL by allowing the liquid LQto flow through the temperature-adjusting flow passage 68.

When the reference mark MFM on the reference member 300 is detected byusing the mask alignment system 360, as shown in FIG. 9, the controlunit CONT performs the detection of the reference mark MFM on thereference member 300, i.e., the detection of the positional relationshipbetween the mark on the mask M and the reference mark MFM on thereference member 300 via the mask M, the projection optical system PL,and the liquid LQ (in the wet state) by the mask alignment system 360.Accordingly, the information about the projection position of the imageof the pattern of the mask M is detected by using the reference mark MFMin the coordinate system defined by the laser interferometer 43.

The temperature adjustment system 60 also performs the temperatureadjustment so that the temperature change is not caused for the opticalelement 2, the reference member 300, and/or the liquid LQ during thedetecting operation performed by the mask alignment system 360. When thetemperature adjustment is performed before the measuring operation orduring the measuring operation of the mask alignment system 360, thetemperature adjustment system 60 also performs the temperatureadjustment so that the approximately the same temperature is ensured forthe liquid LQ, the reference member 300, and the optical element 2, onthe basis of the measurement results obtained, for example, by thetemperature sensors 81, 82, 84. When the temperature adjustment isperformed for the optical element 2, the reference member 300, and theliquid LQ as described above, it is possible to avoid the change of theoptical characteristic and the thermal deformation of the opticalelement 2 due to the temperature change, the thermal deformation of thereference member 300, and the temperature change of the liquid LQ. Thus,it is possible to accurately detect the reference marks PFM, MFM.

After the completion of the detection of the reference mark MFM, thecontrol unit CONT recovers the liquid LQ of the liquid immersion areaAR2 formed on the upper surface 301A of the reference member 300 byusing the liquid recovery mechanism 20 or another predetermined liquidrecovery mechanism provided separately from the liquid recoverymechanism 20.

Subsequently, the control unit CONT starts the alignment process. Thecontrol unit CONT determines the baseline amount which is the spacingdistance (positional relationship) between the detection referenceposition of the substrate alignment system 350 and the projectionposition of the image of the pattern. Specifically, the positionalrelationship (baseline amount) between the detection reference positionof the substrate alignment system 350 and the projection position of theimage of the pattern in the coordinate system defined by the laserinterferometer 43 is determined on the basis of the detection referenceposition of the substrate alignment system 350, the projection positionof the image of the pattern, and the predetermined positionalrelationship between the reference mark PFM and the reference mark MFM.

The control unit CONT detects the alignment marks 1 formed on the shotareas S1 to S24 as the exposure objective areas on the substrate P bythe substrate alignment system 350 not through the liquid LQ (in the drystate) in order to perform the overlay exposure for the substrate P. Theposition of the substrate stage PST, which is brought about when thesubstrate alignment system 350 detects the alignment mark 1, is measuredby the laser interferometer 43. The obtained measurement result isoutputted to the control unit CONT. The control unit CONT determines theposition information (deviation) of each of the shot areas S1 to S24with respect to the detection reference position of the substratealignment system 350 to determine, from the position of the substratestage PST at that time, the alignment information (arrangementinformation) of each of the shot areas S1 to S24 in the coordinatesystem defined by the laser interferometer 43. It is not necessarilyindispensable that all of the alignment marks formed in attendance onthe shot areas S1 to S24 are detected. It is also allowable to determinethe alignment information about the shot areas S1 to S24 by detecting apart or parts of the alignment marks as disclosed, for example, inJapanese Patent Application Laid-open No. 61-44429 (U.S. Pat. No.4,780,617).

Alternatively, the surface position information about the surface of thesubstrate P may be detected not through the liquid LQ (in the dry state)by the focus-detecting system 30 concurrently with the detection of thealignment mark 1 on the substrate P by the substrate alignment system350. In this case, the detection result of the focus-detecting system 30is stored in the control unit CONT while being corresponded to theposition on the substrate P.

The temperature adjustment system 60 also allows the liquid LQ to flow,for example, through the temperature-adjusting flow passage 62 and thetemperature-adjusting flow passage 65 so that the temperature adjustmentis effected for the substrate stage PST including the substrate holderPH during the detection and before the detection of the alignment mark 1on the substrate P by the substrate alignment system 350 not through theliquid LQ. The temperature adjustment system 60 suppresses thetemperature change of the substrate P held by the substrate holder PH byeffecting the temperature adjustment for the substrate holder PH. Thesubstrate alignment system 350 detects the alignment mark 1 on thesubstrate P held by the substrate holder PH having being subjected tothe temperature adjustment.

As described above, the temperature adjustment system 60 can perform thetemperature adjustment for the substrate P, the reference member 300,the measuring members such as the upper plates 401, 501, and the opticalelement 2 concurrently with the alignment process and the measurementprocess after the substrate P is loaded on the substrate stage PST. Forexample, when the substrate P is subjected to the temperatureadjustment, then the substrate holder PH may be subjected to thetemperature adjustment as described above, and the substrate P may besubjected to the temperature adjustment as well by the aid of thetemperature-adjusted substrate holder PH. Alternatively, the substrate Pcan be also subjected to the temperature adjustment such that thetemperature-adjusted liquid LQ, which is to be used for the exposure forthe substrate P, is supplied from the supply ports 12 onto the substrateP without performing the temperature adjustment for the substrate holderPH or concurrently with the temperature adjustment performed for thesubstrate holder. When the temperature adjustment is performed for thesubstrate P before the substrate alignment system 350 detects, forexample, the alignment mark 1 on the substrate P held on the substratestage PST, then it is possible to avoid the thermal deformation of thesubstrate P as well as the positional deviation of the alignment mark 1,and it is possible to improve the mark detection accuracy. When thetemperature adjustment is performed by supplying the liquid LQ onto thesubstrate P, the substrate alignment system 350 detects the alignmentmark 1 not through the liquid LQ after the liquid LQ is recovered fromthe surface of the substrate P by the liquid recovery mechanism 20. Whenthe upper surface of the substrate stage PST is sufficiently wide, thefollowing procedure may also be adopted. That is, the alignment mark onthe substrate P is detected not through the liquid LQ by the substratealignment system 350 while retaining the liquid LQ on the image planeside of the projection optical system PL. Also in this case, thesubstrate P (substrate holder PH) and the liquid LQ are subjected to thetemperature adjustment by the temperature adjustment system 60.Therefore, even when a part or all of the liquid immersion area isformed on the substrate P during the detection of the alignment mark bythe substrate alignment system 350, then the substrate P does not causeany thermal deformation (thermal expansion and contraction), and theposition information of the alignment mark on the substrate P can beaccurately detected.

After the alignment marks 1 on the substrate P are detected by thesubstrate alignment system 350, the control unit CONT drives the liquidsupply mechanism 10 to supply the liquid LQ onto the substrate P andderives the liquid recovery mechanism 20 to recover a predeterminedamount of the liquid LQ from the surface of the substrate P in order toperform the liquid immersion exposure for the substrate P. Accordingly,the liquid immersion area AR2 of the liquid LQ is formed between thesubstrate P and the optical element 2 disposed at the end portion of theprojection optical system PL.

As described above, in this embodiment, the liquid LQ is absent on thesubstrate P during the detection of the alignment marks 1 by thesubstrate alignment system 350, and the liquid LQ is supplied onto thesubstrate P by the liquid supply mechanism 10 after the detection of thealignment marks 1 by the substrate alignment system 350. Therefore,after the detection of the alignment marks 1 by the substrate alignmentsystem 350, the temperature adjustment system 60 continuously performsthe temperature adjustment for the substrate holder PH which holds thesubstrate P so that the temperature change and the thermal deformationof the substrate P are not caused by the contact between the liquid LQand the substrate P. The temperature adjustment system 60 adjusts thetemperature of the liquid LQ to be supplied to the temperature-adjustingflow passage 62 and the liquid supply amount per unit time, for example,on the basis of the temperature measurement result for the substrate Pobtained by the temperature sensor 80 provided in the upper surface ofthe substrate holder PH. Thus, the temperature adjustment is effectedfor the substrate P by the aid of the substrate holder PH.

The control unit CONT measures the temperature of the liquid LQ by usingthe temperature sensor before starting the exposure for the substrate P.The liquid LQ, which is to be used for the exposure, is made to flowonto the substrate P, and/or the temperature adjustment is performed forthe substrate holder PH and/or the optical element 2 depending on thetemperature of the liquid LQ. Accordingly, the temperatures of theliquid LQ and the substrate P are in the desired state.

The control unit CONT performs the projection exposure (liquid immersionexposure) with the image of the pattern of the mask M onto the substrateP via the projection optical system PL and the liquid LQ disposedbetween the projection optical system PL and the substrate P, whilemoving the substrate stage PST supporting the substrate P in the X axisdirection (scanning direction), while recovering the liquid LQ from thesurface of the substrate P by the liquid recovery mechanism 20concurrently with the supply of the liquid LQ onto the substrate P bythe liquid supply mechanism 10 (Step SA4).

The liquid LQ, which has been supplied from the liquid supply section 11of the liquid supply mechanism 10 in order to form the liquid immersionarea AR2, flows through the supply tubes 13A, 13B, and then the liquidLQ is supplied onto the substrate P from the liquid supply ports 12A,12B via the supply flow passages formed in the flow passage-formingmember 70. The liquid LQ, which has been supplied onto the substrate Pfrom the liquid supply ports 12A, 12B, is supplied so that the liquid LQis spread while causing the wetting between the substrate P and thelower end surface of the end portion (optical element 2) of theprojection optical system PL. The liquid immersion area AR2, which issmaller than the substrate P and which is larger than the projectionarea AR1, is locally formed on a part of the substrate P including theprojection area AR1. In this situation, the control unit CONT suppliesthe liquid LQ onto the substrate P simultaneously from the both sides ofthe projection area AR1 in relation to the scanning direction, throughthe liquid supply ports 12A, 12B which are included in the liquid supplymechanism 10 and which are arranged on the both sides in the X axisdirection (scanning direction) of the projection area AR1 respectively.Accordingly, the liquid immersion area AR2 is formed uniformly andsatisfactorily.

In this embodiment, the exposure apparatus EX performs the projectionexposure for the substrate P with the image of the pattern of the mask Mwhile moving the mask M and the substrate P in the X axis direction(scanning direction). During the scanning exposure, an image of apattern of a part of the mask M is projected onto the projection areaAR1 via the projection optical system PL and the liquid LQ in the liquidimmersion area AR2. The mask M is moved at the velocity V in the −Xdirection (or in the +X direction), in synchronization with which thesubstrate P is moved at the velocity β·V (β is the projectionmagnification) in the +X direction (or in the −X direction) with respectto the projection area AR1. The plurality of shot areas S1 to S24 areset on the substrate P. After the completion of the exposure for oneshot area, the next shot area is moved to the scanning start position inaccordance with the stepping movement of the substrate P. The scanningexposure process is successively performed thereafter for each of theshot areas S1 to S24 while moving the substrate P in the step-and-scanmanner.

When the plurality of shot areas S1 to S24 on the substrate P aresuccessively subjected to the exposure respectively, the XY stage 53 ismoved on the basis of the baseline amount and the position information(arrangement information) about the respective shot areas determined inStep SA3. The liquid immersion exposure process is performed for each ofthe shot areas S1 to S24 while effecting the positional adjustmentbetween the image of the pattern and each of the shot areas S1 to S24 onthe substrate P.

The control unit CONT detects the surface position information about thesurface of the substrate P by using the focus-detecting system 30 duringthe exposure for the shot areas S1 to S24. The liquid immersion exposureprocess is performed while moving the substrate P in the Z axisdirection and/or in the direction of inclination by the aid of thesubstrate stage PST and/or changing the image characteristic of theprojection optical system PL so that the surface of the substrate P isadjusted to match the image plane via the projection optical system PLand the liquid LQ. The focus-detecting system 30 detects the surfaceposition information about the surface of the substrate P by emittingthe detecting light beam La from the light-emitting section 30A throughthe liquid LQ onto the substrate P and receiving the reflected lightbeam from the substrate P through the liquid LQ by the light-receivingsection 30B during the exposure for each of the shot areas.

The positional relationship between the surface of the substrate P andthe image plane formed through the liquid LQ may be adjusted on thebasis of the surface information about the substrate P determined beforethe supply of the liquid LQ without using the focus-detecting system 30during the scanning exposure for each of the shot areas S1 to S24.Alternatively, the position of the surface of the substrate P may becontrolled in consideration of both of the surface position informationof the substrate P determined before the supply of the liquid LQ and thesurface position information of the substrate P detected through theliquid LQ during the scanning exposure.

The control unit CONT concurrently performs the liquid immersionexposure process for the substrate P and the temperature adjustment bythe temperature adjustment system 60. The temperature adjustment system60 performs the temperature adjustment for the liquid LQ to be suppliedonto the substrate P and the temperature adjustment for the substrateholder PH and the optical element 2 so that the temperature of theliquid LQ of the liquid immersion area AR2 is not changed, thetemperature distribution is not generated in the liquid LQ, and thetemperature change and the thermal deformation are not caused for theoptical element 2 and the substrate P. In this procedure, thetemperature adjustment system 60 uses, for example, the temperaturesensors 80, 81, 84 to measure the temperatures of the substrate P(substrate holder PH), the liquid LQ to be supplied, and the opticalelement 2. The temperature adjustment system 60 performs the temperatureadjustment for the substrate holder PH and the optical element 2 and thetemperature adjustment for the liquid LQ to be supplied onto thesubstrate P on the basis of the measurement results obtained thereby.

The factors to cause the temperature distribution and the temperaturechange of the liquid LQ include, for example, the temperature change ofthe optical element 2 and/or the substrate P which makes contact withthe liquid LQ. The factors to cause the temperature change of thesubstrate P and the optical element 2 include, for example, theabsorption of the thermal energy of the radiated exposure light beam ELby the optical element 2 and/or the substrate P (including the resist onthe substrate P) and the heat transfer to the substrate P from thesubstrate stage PST which has the motor and the actuator (substratestage-driving unit PSTD) as the heat-generating sources. Further, it isalso considered that the liquid LQ itself undergoes the temperaturechange by being irradiated with the exposure light beam EL. When thedifference appears among the temperature of the liquid LQ, thetemperature of the substrate P which makes contact with the liquid LQ,and the temperature of the optical element 2 due to the factors asdescribed above, the heat exchange (heat transfer) is effectedtherebetween. There is a possibility such that the temperature changeand/or the temperature distribution arises in the liquid LQ with whichthe space between the substrate P and the optical element 2 is filled,and/or the temperature change and/or the thermal deformation of thesubstrate P and/or the optical element 2 is caused. In such a situation,there is such a possibility that the inconvenience may arise as follows.That is, the optical path for the exposure light beam EL is varied dueto the temperature change as described above. The substrate P isthermally deformed. The optical element 2 is thermally deformed to causethe variation of the image characteristic to be obtained via theprojection optical system PL and the liquid LQ. The accuracy isdeteriorated for the overlay and the positional adjustment for the imageof the pattern. Further, the following possibility may also arise. Thatis, the refractive index fluctuation and/or the refractive indexdistribution appears in the liquid LQ due to the temperature change(temperature distribution) of the liquid LQ. For example, the opticalpath for the detecting light beam La of the focus-detecting system 30 isvaried to cause any measurement error in the focus-detecting system 30.

Further, there is such a possibility that the temperature of the liquidLQ supplied from the liquid temperature-adjusting unit 61 may beslightly changed with time. Also in such a situation, the temperaturedistribution and/or the temperature change is caused in the liquid LQwith which the space between the substrate P and the optical element 2is filled.

Accordingly, the temperature adjustment system 60 performs thetemperature adjustment for the liquid LQ, the optical element 2, and thesubstrate holder PH (as well as the substrate P) so that approximatelythe same temperature is ensured for the liquid LQ, the optical element2, and the substrate P, while no temperature change is caused for theoptical element 2, the substrate P, and the liquid LQ due to the contactbetween the liquid LQ and the substrate P and/or the contact between theliquid LQ and the optical element 2. Thus, it is possible to avoid theinconvenience which would be otherwise caused such that the measurementaccuracy and the exposure accuracy are deteriorated.

In particular, the temperature adjustment system 60 performs thetemperature adjustment for the substrate holder PH so that the heattransfer is reduced between the substrate P and the liquid LQ on thesubstrate P. Therefore, it is possible to effectively avoid theinconvenience which would be otherwise caused such that the substrate Pis thermally deformed and/or the liquid LQ undergoes the temperaturechange and/or the temperature distribution due to the thermal energytransferred to the substrate P from the substrate stage PST which hasthe motor and the actuator as the heat-generating sources.

The temperature adjustment system 60 performs the temperature adjustmentfor the optical element 2 so that the heat transfer is reduced betweenthe optical element 2 and the liquid LQ which makes contact with theoptical element 2. Therefore, it is possible to effectively avoid theinconvenience which would be otherwise caused such that the opticalelement 2 undergoes the temperature change and/or the thermaldeformation and/or the temperature change and/or the temperaturedistribution arises in the liquid LQ due to the thermal energytransferred to the liquid LQ which makes contact with the opticalelement 2 from the optical element 2 which generates the heat byabsorbing the thermal energy of the exposure light beam EL.

When the temperature distribution appears in the liquid LQ, and therefractive index distribution arises, then there is such a possibilitythat the focus-detecting system 30, which is constructed to radiate thedetecting light beam La in the oblique direction (from the obliquelyupward position) with respect to the substrate P, may undergo theconsiderable deterioration of the measurement accuracy. However, thetemperature adjustment system 60 performs the temperature adjustment forthe substrate holder PH and/or the temperature adjustment for theoptical element 2 so that the temperature distribution is not caused inthe liquid LQ. Accordingly, it is possible to avoid the deterioration ofthe measurement accuracy of the focus-detecting system 30.

Another liquid temperature-adjusting unit, which is distinct from theliquid temperature-adjusting unit 61 to be used for the temperatureadjustment for the optical element 2 and the substrate holder PH, may beprovided at an intermediate position of each of the supply tubes 13A,13B when the temperature adjustment is performed for the liquid LQ ofthe liquid immersion area AR2. The temperature of the liquid LQ to besupplied from the liquid supply ports 12A, 12B may be adjusted, and/orthe liquid supply amount per unit time may be adjusted on the basis ofthe measurement result obtained by the temperature sensor.

After the completion of the liquid immersion exposure for the substrateP, the control unit CONT uses the liquid recovery mechanism 20 or thepredetermined liquid recovery mechanism provided distinctly from theliquid recovery mechanism 20 to recover the liquid LQ of the liquidimmersion area AR2 formed on the substrate P (Step SA5).

After the liquid LQ is recovered from the surfaces of the substrate Pand the substrate stage PST, the control unit CONT exports (unloads) thesubstrate P having been subjected to the exposure, from the substratestage PST (Step SA6).

As explained above, the substrate P, which makes contact with the liquidLQ, can be adjusted to have the desired temperature by the aid of thesubstrate holder PH by performing the temperature adjustment for thesubstrate holder PH which holds the substrate P, by using thetemperature adjustment system 60. For example, the upper plate 401 andthe optical element 2 through which the exposure light beam EL passeswhile making contact with the liquid LQ can be also subjected to thetemperature adjustment by using the temperature adjustment system 60.Therefore, the liquid LQ, which makes contact with the substrate P andthe optical element 2, can be maintained at the desired temperature aswell. Additionally, it is also possible to avoid the temperature changeand the thermal deformation of the substrate P and the optical element 2making contact with the liquid LQ. Therefore, even in the case of thearrangement in which the detecting light beam La is radiated onto theliquid LQ to perform the measurement process on the basis of thedetecting light beam La through the liquid LQ, it is possible tomaintain the satisfactory measurement accuracy. The exposure light beamEL can be radiated onto the substrate P through the liquid LQ maintainedat the desired temperature. Therefore, it is possible to maintain thesatisfactory exposure accuracy. Further, the temperature adjustment isperformed, for example, for the substrate P (substrate holder PH), theoptical element 2, and the reference member 300 which make contact withthe liquid LQ. Therefore, it is also possible to avoid the temperaturechange and the thermal deformation of, for example, the substrate P, theoptical element 2, and the reference member 300, which would beotherwise caused by the vaporization of the liquid.

For example, when a part of the liquid immersion area of the liquid LQformed on the reference member 300 is arranged on the flat surface 51 asshown in FIG. 9, or when the edge area E (FIG. 1) on the substrate P issubjected to the exposure, then a part of the liquid immersion area AR2of the liquid LQ is arranged on the flat surface 51 in some cases.However, it is possible to avoid the inconvenience of the occurrence ofthe temperature change (temperature distribution) in the liquid LQ evenwhen the liquid LQ makes contact with the flat surface 51, by effectingthe temperature adjustment for the plate member 50 for forming the flatsurface 51 around the substrate P as well.

For example, when the temperature adjustment is performed for thesubstrate P before performing the detection of the alignment mark 1 onthe substrate P, or when the temperature adjustment is performed beforestarting the exposure for the substrate P, then the temperatureadjustment can be also performed for the substrate P such that theliquid LQ, which is to be used for the exposure, is made to flow ontothe substrate P for a certain period of time. In this procedure, whenthe liquid supply amount per unit time, which is brought about duringthe temperature adjustment, is made larger than the liquid supply amountwhich is brought about during the liquid immersion exposure.Accordingly, it is possible to adjust the substrate P to have thedesired temperature more effectively in a short period of time. When theliquid supply amount is increased, it is appropriate to increase theliquid recovery amount in response to the liquid supply amount in orderto avoid any outflow of the liquid LQ.

It is preferable that the temperature adjustment is performed so thatthe difference in temperature of the substrate P (or the liquid LQ orthe optical element 2) is decreased as much as possible between thealignment process (Step SA3) and the liquid immersion exposure process(Step SA4) in order to improve the overlay accuracy of the pattern onthe substrate P. However, there is such a possibility that thedifference in temperature arises, for example, due the light radiationcondition and the driving condition of the actuator. In such asituation, for example, the thermal deformation amount of the substrateP (variation amount of the linear expansion), which is caused by thedifference in temperature between the alignment process and the liquidimmersion exposure process, is previously determined. A correctionamount, which is used to correct the variation amount, is determinedbeforehand. The positional relationship between the substrate P and theimage of the pattern may be corrected on the basis of the correctionamount when the overlay exposure is performed.

In the embodiment described above, the measurement process is performedafter the substrate P is loaded on the substrate stage PST. However, themeasurement process may be performed every time when a plurality ofsubstrates are processed, during which only the alignment process may beperformed in Step SA3.

The inflow of the liquid LQ into the recess 55 of the Z stage 52 isavoided during each of the measurement processes by loading thesubstrate P as the exposure objective on the substrate stage PST whenthe measurement process is performed. However, when the upper surface ofthe substrate stage PST has a sufficient areal size with respect to thesize of the liquid immersion area AR2, and the liquid LQ makes no inflowinto the recess 55 of the Z stage 52 when the measurement process isperformed, then the substrate P may be loaded on the substrate stageafter the measurement process is completed.

In order to avoid the inflow of the liquid LQ into the recess 55 of theZ stage 52 when the measurement process is performed, a dummy substrate,which has the same shape as that of the substrate P, may be loaded onthe substrate stage PST in place of the substrate P as the exposureobjective, and the dummy substrate may be exchanged with the substrate Pas the exposure objective after the measurement process is completed.

In the embodiment described above, the temperature adjustment isperformed for the substrate P by using the temperature-adjusting holder90 before the substrate P is loaded on the substrate stage PST. However,it is also allowable that the temperature-adjusting holder 90 is omittedon condition that the sufficient effect is obtained by making thetemperature-adjusted liquid LQ to flow onto the substrate P afterloading the substrate P on the substrate stage PST and/or performing thetemperature adjustment for the substrate holder PH.

In the embodiment described above, the temperature adjustment isperformed, for example, for the optical element 2, the substrate holderPH, and the reference member 300. However, it is not necessarilyindispensable that the temperature adjustment is performed for all ofthem. It is also allowable that the temperature adjustment is performedfor only such a member in which any influence is feared to arise due tothe heat exchange with the liquid LQ.

In the embodiment described above, the temperature adjustment isperformed for the objects such as the optical element 2, the substrate P(substrate holder PH), and the reference member 300 which make contactwith the liquid LQ. However, it is enough that only the temperature ofthe liquid LQ to be supplied is adjusted depending on the temperature ofthe object or objects, which makes contact with the liquid LQ suppliedto the image plane side of the projection optical system PL, withoutperforming the temperature adjustment for the object or objects. In thisprocedure, it is desirable that the temperature of each of the objectsis measured, for example, by using a temperature sensor, and thetemperature of the liquid LQ is adjusted on the basis of the measurementresult obtained thereby. Also in this case, it is possible to suppressthe heat exchange between the liquid LQ and the object which makescontact with the liquid LQ, and it is possible to avoid the temperaturechange (occurrence of the temperature distribution) of the liquid LQ andthe temperature change and the thermal deformation of the object whichmakes contact with the liquid LQ.

Further, when the heat exchange (heat transfer) is also feared to occurbetween the liquid LQ and the flow passage-forming member 70, it is alsoappropriate that the flow passage-forming member 70 is subjected to thetemperature adjustment by using the temperature adjustment system 60. Inthis case, a heater may be embedded in the flow passage-forming member70, and/or a temperature-adjusting flow passage, which is distinct fromthe flow passages communicated with the liquid supply mechanism 10 andthe liquid recovery mechanism 20, may be provided in the flowpassage-forming member 70 to make the temperature-adjusting fluid toflow through the temperature-adjusting flow passage. In thisarrangement, a temperature sensor may be arranged for the flowpassage-forming member 70 to measure the temperature of the flowpassage-forming member 70. The temperature of the flow passage-formingmember 70 may be adjusted on the basis of the obtained result.

Further, in the embodiment described above, the temperature-adjustingflow passage 62 is formed in the substrate holder PH in order to performthe temperature adjustment for the substrate P, and the temperatureadjustment is performed for the substrate holder PH by making thetemperature-adjusted liquid LQ to flow through the temperature-adjustingflow passage 62. However, a temperature-adjusting mechanism for themotor and/or the actuator provided in the substrate stage PST may bealso used for the temperature adjustment for the substrate holder PH.

Another embodiment of the present invention will be explained below. Inthe following description, the constitutive parts or components, whichare the same as or equivalent to those of the embodiment describedabove, are designated by the same reference numerals, any explanation ofwhich will be simplified or omitted.

With reference to FIG. 10, a stepped portion 71 is formed on the lowersurface 70A of the flow passage-forming member 70 so that the areas, inwhich the liquid supply ports 12A, 12B are provided, are disposed far oraway from the substrate P as compared with the areas in which the liquidrecovery ports 22A, 22B are provided. Agitator units 72, which agitatethe liquid LQ in the liquid immersion area AR2, are provided on thesurface 71A of the stepped portion 71, the surface 71A being directedtoward the optical axis AX of the projection optical system PL. Theagitator units 72 are provided in the vicinity of the liquid supplyports 12A, 12B respectively to agitate the liquid LQ supplied onto thesubstrate P via the liquid supply ports 12A, 12B. The agitator units 72are capable of agitating the liquid LQ during, before, and/or after theliquid immersion exposure for the substrate P and/or during, before,and/or after the measurement in the state in which the liquid LQ isarranged on the reference member 300 or the upper plates 401, 501. Theliquid LQ is agitated with the agitator units 72, and thus it ispossible to avoid the inconvenience of the occurrence of the temperaturedistribution in the liquid LQ.

As shown in FIG. 11, it is also appropriate that second liquid supplyports 18A, 18B, which blows the jets of the liquid LQ against theoptical element 2, are provided, for example, on the inner side surface70B of the flow passage-forming member 70. That is, the second liquidsupply ports 18A, 18B can be formed so that the second liquid supplyports 18A, 18B are directed toward the liquid contact surface 2A of theoptical element 2 as well. When the liquid LQ is supplied from thesecond liquid supply ports 18A, 18B so that the liquid LQ is blownagainst the optical element 2, then it is possible to suppress thetemperature change (increase in the temperature) of the optical element2, which would be otherwise caused by the exposure light beam EL, and itis possible to avoid the inconvenience of the occurrence of thetemperature distribution in the liquid LQ, by maintaining the opticalelement 2 at the desired temperature.

In place of the arrangement in which the liquid LQ is allowed to flow sothat the liquid LQ is blown against the optical element 2, it is alsoallowable that the liquid LQ, which is supplied from the second liquidsupply ports 18A, 18B, flows while forming laminar flows along theliquid contact surface 2A of the optical element 2. In this case, it isappropriate that the second liquid supply ports 18A, 18B are formed inthe vicinity of the liquid contact surface 2A while being directed inthe directions perpendicular to the optical axis of the optical element2. Accordingly, it is possible to suppress the influence (for example,any friction and/or any dissolution) exerted on the optical element 2.

In the embodiment described above, when the temperature adjustment isperformed for the optical element 2 by supplying the liquid LQ for theexposure to the image plane side of the projection optical system PL,the liquid LQ is supplied in the state in which the optical element 2 isopposed to the substrate P or the predetermined flat surface on thesubstrate stage PST. However, as shown in FIG. 12, a plate member 150,which is provided movably toward and away with respect to the areadisposed under or below the projection optical system PL, may beprovided. When the plate member 150 is arranged in the area disposedbelow the projection optical system PL, the plate member 150 can beopposed to the optical element 2 of the projection optical system PL ata predetermined distance with respect to the optical member 2. Arotating mechanism 152, which is rotated about the center of rotation ofa shaft section 151, is provided for the plate member 150. The platemember 150 is movable toward and away with respect to the area disposedbelow the projection optical system PL in accordance with the driving ofthe rotating mechanism 152. The upper end of the shaft section 151 canbe attached to a predetermined member including, for example, a column(body) or a surface plate for holding the barrel PK of the projectionoptical system PL. The rotating mechanism 152 also has a function as aZ-driving mechanism for moving the plate member 150 in the Z axisdirection. It is possible to adjust the distance between the platemember 150 and the optical element 2 of the projection optical systemPL. When the plate member 150 is provided as described above, thetemperature adjustment can be performed for the optical element 2 byusing the liquid LQ by supplying the liquid LQ from the liquid supplyports 12 in a state in which the optical element 2 is opposed to theplate member 150, for example, even when the substrate stage PST is notarranged in the area disposed below the projection optical system PL inorder to load or unload the substrate P. Additionally, it is alsopossible to always wet the liquid contact surface 2A of the projectionoptical system PL. Therefore, it is also possible to avoid the adhesionof any foreign matter or the like to the liquid contact surface 2A,which would be otherwise caused by the drying of the liquid contactsurface 2A of the projection optical system PL. Further, even when thesubstrate stage PST is not positioned below the projection opticalsystem PL, the plate member 150 can be used to prevent the liquid fromfalling onto any inconvenient place from the projection optical systemPL (optical element 2) and/or the flow passage-forming member 70.

The liquid temperature-adjusting unit 61 is capable of preciselyadjusting the temperature of the liquid LQ. However, as depicted in agraph schematically shown in FIG. 13(a), there is such a possibilitythat the temperature of the liquid LQ supplied from the liquidtemperature-adjusting unit 61 may be slightly changed with time. In thegraph shown in FIG. 13(a), the horizontal axis represents the time t,and the vertical axis represents the temperature (temperature variationamount) ΔT. When the liquid LQ, which undergoes the temperature changewith time as described above, is continuously supplied onto thesubstrate P, any temperature distribution appears in the liquid LQ ofthe liquid immersion area AR2 formed on the substrate P.

In view of the above, as shown in FIG. 14, an attenuating member 100,which attenuates the temperature variation of the liquid LQ allowed topass therethrough, is provided in the supply passage 13 between theliquid supply port 12 and the liquid temperature-adjusting unit 61.Accordingly, it is possible to attenuate the temperature change withtime of the liquid LQ supplied via the liquid supply port 12 as depictedin a graph schematically shown in FIG. 13(b). The attenuating member 100is thermally insulated from the surroundings by a heat insulatingmaterial. Those usable as the attenuating member 100 include, forexample, porous members represented by meshes made of metals andsintered members made of metals. Alternatively, it is also possible touse inline filters formed of, for example, hollow fibers. In the case ofthe porous member or the like, the contact area with respect to theliquid LQ passing therethrough is large, and the thermal capacity withrespect to the liquid LQ is large as well. Therefore, it is possible tosufficiently attenuate the temperature variation of the liquid LQpassing therethrough. When the metal is used for the attenuating member100, it is preferable that the metal is stainless steel.

The present invention is also applicable to a twin-stage type exposureapparatus. The structure and the exposure operation of the twin-stagetype exposure apparatus are disclosed, for example, in Japanese PatentApplication Laid-open Nos. 10-163099 and 10-214783 (corresponding toU.S. Pat. Nos. 6,341,007, 6,400,441, 6,549,269, and 6,590,634),Published Japanese Translation of PCT International Publication forPatent Application No. 2000-505958 (corresponding to U.S. Pat. No.5,969,441), and U.S. Pat. No. 6,208,407, contents of which areincorporated herein by reference within a range of permission of thedomestic laws and ordinances of the state designated or selected in thisinternational application.

FIG. 15 shows a schematic arrangement illustrating an example of atwin-stage type exposure apparatus. The twin-stage type exposureapparatus EX2 shown in FIG. 15 includes a first substrate stage PST1which has a substrate holder PH1 for holding the substrate P and whichis movable while holding the substrate P on the substrate holder PH1,and a second substrate stage PST2 which has a substrate holder PH2 forholding the substrate P and which is movable while holding the substrateP on the substrate holder PH2. The first and second substrate stagesPST1, PST2 are movable independently on a common base 54 respectively.Each of the first and second substrate stages PST1, PST2 is providedwith the sensors such as the reference member 300, the unevenilluminance sensor 400, and the spatial image-measuring sensor 500 inthe same manner as in the embodiment described above.

The twin-stage type exposure apparatus EX2 further includes a measuringstation ST1 for performing the measurement for the substrate P held onone substrate stage PST1 (PST2), and an exposure station ST2 providedwith the projection optical system PL for performing the exposure forthe substrate P held on the other substrate stage PST2 (PST1). All ofthe components of the system shown in FIG. 1 (including thefocus-detecting system 30) except for the substrate alignment system 350are provided in the exposure station ST2. The substrate alignment system350 and the focus-detecting system 30 having the light-emitting section30A and the light-receiving section 30B are provided in the measuringstation ST1.

The temperature adjustment system 60, which performs the temperatureadjustment for the substrate holder PH1, PH2 in the measuring stationST1, is provided for each of the first substrate stage PST1 and thesecond substrate stage PST2.

The basic operation of the twin-stage type exposure apparatus asdescribed above is as follows. That is, for example, the exposureprocess is performed for the substrate P on the second substrate stagePST2 in the exposure station ST2, during which the exchange process andthe measurement process are performed for the substrate P on the firstsubstrate stage PST1 in the measuring station ST1. When the respectiveoperations are completed, the second substrate stage PST2 is moved tothe measuring station ST1, concurrently with which the first substratestage PST1 is moved to the exposure station ST2. In this situation, themeasurement process and the exchange process are performed on the secondsubstrate stage PST2, and the exposure process is performed for thesubstrate P on the first substrate stage PST1.

In this embodiment, the measurement of the substrate P, which isperformed in the measuring station ST1, includes the measurement of thesurface position information about the surface of the substrate Pperformed by the focus-detecting system 30, and the detection of thealignment marks 1 on the substrate P and the reference mark PFM on thereference member 300 performed by the substrate alignment system 350.For example, the liquid immersion exposure process is performed in theexposure station ST2 for the substrate P on the second substrate stagePST2, during which the measurement process is performed by using thesubstrate alignment system 350, the focus-detecting system 30, and thereference member 300 in the measuring station ST1 for the substrate P onthe first substrate stage PST1. When the measurement process iscompleted, the exchange operation is performed for the first substratestage PST1 and the second substrate stage PST2. The first substratestage PST1 is positioned so that the reference member 300 of the firstsubstrate stage PST1 is opposed to the projection optical system PL asshown in FIG. 15. In this state, the control unit CONT starts the supplyof the liquid LQ. The space between the projection optical system PL andthe reference member 300 is filled with the liquid LQ to perform theexposure process and the measurement process for the reference mark MFMof the reference member 300 by the mask alignment system 360 through theliquid LQ. The alignment information about the respective shot areas S1to S24, which has been once determined in the measuring station ST1, isset (stored) on the basis of the reference mark PFM of the referencemember 300. When the liquid immersion exposure is executed in theexposure station ST2, the movement of the first substrate stage PST1 iscontrolled so that the respective shot areas S1 to S24 are positioned onthe basis of the positional relationship between the mask M and thereference mark MFM formed in the predetermined positional relationshipwith respect to the reference mark PFM of the reference member 300. Thatis, the alignment information (arrangement information) about therespective shot areas S1 to S24 determined in the measuring station ST1is effectively transmitted to the exposure station ST2 by using thereference marks PFM, MFM.

As described above, in the case of the twin-stage type exposureapparatus, the liquid immersion exposure process can be performed on onestage, during which the measurement process can be performed not throughthe liquid on the other stage. Therefore, it is possible to improve thethroughput of the exposure process.

The temperature adjustment system 60 adjusts the substrate P so that thesubstrate P has the predetermined temperature by performing thetemperature adjustment for the substrate holder PH before executing themeasurement for the substrate P in the measuring station ST1. After thesubstrate P is adjusted to have the predetermined temperature by the aidof the substrate holder PH, the measurement process is performed for thesubstrate P. The temperature adjustment system 60 continues thetemperature adjustment for the substrate P by the aid of the substrateholder PH during the measurement process for the substrate P as well.

When the temperature adjustment is performed for the substrate holderPH1 in the measuring station ST1, the temperature adjustment system 60adjusts the temperature of the substrate holder PH1 depending on thetemperature of the liquid LQ supplied from the liquid supply mechanism10 provided for the exposure station ST2. Specifically, the temperatureadjustment system 60 adjusts the temperature of the substrate holder PH1in the measuring station ST1 so that the temperature of the substrate Pis approximately the same as the temperature of the liquid LQ suppliedfrom the liquid supply mechanism 10. After the measurement process forthe substrate P is completed in the measuring station ST1, the controlunit CONT moves the first substrate stage PST1 from the measuringstation ST1 to the exposure station ST2.

In the exposure station ST2, the exposure process is performed for thesubstrate P supported on the second substrate stage PST2. After theexposure process for the substrate P on the second substrate stage PST2is completed in the exposure station ST2, the control unit CONT moves,to the exposure station ST2, the first substrate stage PST1 whichsupports the substrate P for which the measurement process has beencompleted in the measuring station ST1. In this situation, when theexposure process is continued for the substrate P on the secondsubstrate stage PST2 in the exposure station ST2 after the measurementprocess is completed for the substrate P on the first substrate stagePST1, the control unit CONT continues the temperature adjustment by thetemperature adjustment system 60 for the substrate P on the firstsubstrate stage PST1 in the measuring station ST1 until the exposure iscompleted for the substrate P in the exposure station ST2. In otherwords, after the control unit CONT started the temperature adjustment isstarted for the substrate P on the first substrate stage PST1 in themeasuring station ST1, the control unit CONT continues the temperatureadjustment in the measuring station ST1 until the exposure process iscompleted for the substrate P on the second substrate stage PST2 in theexposure station ST2.

The control unit CONT supplies the liquid LQ onto the substrate P on thefirst substrate stage PST1 from the liquid supply mechanism 10 in orderto perform the liquid immersion exposure for the substrate P, the firstsubstrate stage PST1 having been moved to the exposure station ST2 afterthe completion of the measurement process. In this situation, thesubstrate P, which is held on the first substrate stage PST1, isadjusted to have approximately the same temperature as that of theliquid LQ by the temperature adjustment system 60 in the measuringstation ST2. Therefore, even when the liquid LQ is supplied onto thesubstrate P, the temperature change and the thermal deformation of thesubstrate P are not caused. It goes without saying that the temperatureadjustment for the substrate holder PH1 is appropriately continued bythe temperature adjustment system 60 in the exposure station ST2 as wellin order to suppress the temperature change of the substrate P caused bythe contact with the supplied liquid LQ. The control unit CONT exposesthe substrate P by radiating the exposure light beam EL onto thesubstrate P through the liquid LQ in the exposure station ST2. Thecontrol unit CONT exposes the substrate P while performing thetemperature adjustment for the substrate holder PH and the opticalelement 2 by the temperature adjustment system 60 during the exposurefor the substrate P as well. When it is difficult to continue thetemperature adjustment for the substrate holder PH1 after themeasurement performed in the measuring station ST1, the temperatureadjustment may be performed for the substrate P on the substrate holderPH1, for example, by supplying the liquid LQ for the exposure onto thesubstrate P from the liquid supply ports 12 before starting the exposurefor the substrate P on the substrate holder PH1, and the exposure may bestarted after the temperature of the substrate P is approximately thesame as that of the liquid LQ.

As explained above, in the twin-stage type exposure apparatus providedwith the first substrate stage PST1 and the second substrate stage PST1,the substrate holder PH1 for holding the substrate P is subjected to thetemperature adjustment by using the temperature adjustment system 60 inthe measuring station ST1 for performing the measurement process inrelation to the substrate P. Accordingly, the substrate P, which is heldby the substrate holder PH, can be adjusted to have the desiredtemperature. Therefore, the temperature change is prevented fromoccurring in the substrate P and the thermal deformation after themeasurement process performed in the measuring station ST1. Thesubstrate P can be exposed accurately in the exposure station ST2 on thebasis of the information measured in the measuring station ST1 (forexample, the surface information about the substrate P and the positioninformation about the shot areas on the substrate P).

As described above, pure water is used as the liquid LQ in theembodiments of the present invention. Pure water is advantageous in thatpure water is available in a large amount with ease, for example, in thesemiconductor production factory, and pure water exerts no harmfulinfluence, for example, on the optical element (lens) and thephotoresist on the substrate P. Further, pure water exerts no harmfulinfluence on the environment, and the content of impurity is extremelylow. Therefore, it is also expected to obtain the function to wash thesurface of the substrate P and the surface of the optical elementprovided at the end surface of the projection optical system PL. Whenthe purity of pure water supplied from the factory or the like is low,it is also allowable that the exposure apparatus is provided with anultra pure water-producing unit.

It is approved that the refractive index n of pure water (water) withrespect to the exposure light beam EL having a wavelength of about 193nm is approximately 1.44. When the ArF excimer laser beam (wavelength:193 nm) is used as the light source of the exposure light beam EL, thenthe wavelength is shortened on the substrate P by 1/n, i.e., to about134 nm, and a high resolution is obtained. Further, the depth of focusis magnified about n times, i.e., about 1.44 times as compared with thevalue obtained in the air. Therefore, when it is enough to secure anapproximately equivalent depth of focus as compared with the case of theuse in the air, it is possible to further increase the numericalaperture of the projection optical system PL. Also in this viewpoint,the resolution is improved.

When the liquid immersion method is used as described above, thenumerical aperture NA of the projection optical system is 0.9 to 1.3 insome cases. When the numerical aperture NA of the projection opticalsystem is large as described above, it is desirable to use the polarizedillumination, because, with the random polarized light which has beenhitherto used as the exposure light beam the image formation performanceis deteriorated due to the polarization effect in some cases. In thiscase, it is appropriate that the linear polarized illumination, which isadjusted to the longitudinal direction of the line pattern of theline-and-space pattern of the mask (reticle), is effected so that thediffracted light of the S-polarized light component (TE-polarized lightcomponent), i.e., the component in the polarization direction along withthe longitudinal direction of the line pattern is dominantly allowed tooutgo from the pattern of the mask (reticle). When the space between theprojection optical system PL and the resist coated on the surface of thesubstrate P is filled with the liquid, the diffracted light of theS-polarized light component (TE-polarized light component), whichcontributes to the improvement in the contrast, has the hightransmittance on the resist surface, as compared with the case in whichthe space between the projection optical system PL and the resist coatedon the surface of the substrate P is filled with the air (gas).Therefore, it is possible to obtain the high image formation performanceeven when the numerical aperture NA of the projection optical systemexceeds 1.0. Further, it is more effective to appropriately combine, forexample, the phase shift mask and the oblique incidence illuminationmethod (especially the dipole illumination method) adjusted to thelongitudinal direction of the line pattern as disclosed in JapanesePatent Application Laid-open No. 6-188169.

For example, when the ArF excimer laser is used as the exposure lightbeam, and the substrate P is exposed with a fine line-and-space pattern(for example, line-and-space of about 25 to 50 nm) by using theprojection optical system PL having a reduction magnification of about¼, then the mask M acts as a polarizing plate due to the Wave guideeffect depending on the structure of the mask M (for example, thepattern fineness and the thickness of chromium), and the diffractedlight of the S-polarized light component (TE-polarized light component)outgoes from the mask M in an amount larger than that of the diffractedlight of the P-polarized light component (TM-polarized light component)which lowers the contrast. Therefore, in this case, it is desirable touse the linear polarized illumination as described above. However, evenwhen the mask M is illuminated with the random polarized light, it ispossible to obtain the high resolution performance even when thenumerical aperture NA of the projection optical system PL is large, forexample, 0.9 to 1.3. When the substrate P is exposed with an extremelyfine line-and-space pattern on the mask M, there is such a possibilitythat the P-polarized light component (TM-polarized light component) islarger than the S-polarized light component (TE-polarized lightcomponent) due to the Wire Grid effect. However, for example, when theArF excimer laser is used as the exposure light beam, and the substrateP is exposed with a line-and-space pattern larger than 25 nm by usingthe projection optical system PL having a reduction magnification ofabout ¼, then the diffracted light of the S-polarized light component(TE-polarized light component) outgoes from the mask M in an amountlarger than that of the diffracted light of the P-polarized lightcomponent (TM-polarized light component). Therefore, it is possible toobtain the high resolution performance even when the numerical apertureNA of the projection optical system PL is large, for example, 0.9 to1.3.

Further, it is also effective to use the combination of the obliqueincidence illumination method and the polarized illumination method inwhich the linear polarization is effected in the tangential(circumferential) direction of the circle having the center of theoptical axis as disclosed in Japanese Patent Application Laid-open No.6-53120, without being limited only to the linear polarized illumination(S-polarized illumination) adjusted to the longitudinal direction of theline pattern of the mask (reticle). In particular, when the pattern ofthe mask (reticle) includes not only the line pattern extending in onepredetermined direction, but the pattern also includes the line patternsextending in a plurality of different directions in a mixed manner, thenit is possible to obtain the high image formation performance even whenthe numerical aperture NA of the projection optical system is large, byusing, in combination, the zonal illumination method and the polarizedillumination method in which the light is linearly polarized in thetangential direction of the circle having the center of the opticalaxis, as disclosed in Japanese Patent Application Laid-open No. 6-53120as well.

In the embodiment described above, the temperatures of the objects suchas the substrate holder PH, the optical element 2 disposed at the endportion of the projection optical system PL, and the reference member300 which make contact with the liquid LQ are adjusted by making thetemperature-adjusted liquid to flow through the flow passages providedin or around the objects. However, it is also allowable that atemperature-controlled gas is made to flow through the flow passages asdescribed above in place of the liquid.

In the embodiments of the present invention, the optical element 2 isattached to the end portion of the projection optical system PL. Such alens makes it possible to adjust the optical characteristics of theprojection optical system PL, for example, the aberration (sphericalaberration and coma aberration or the like). The optical element, whichis attached to the end portion of the projection optical system PL, maybe an optical plate which is usable to adjust the opticalcharacteristics of the projection optical system PL. Alternatively, theoptical element may be a plane parallel plate or parallel flat platethrough which the exposure light beam EL is transmissive. When theoptical element, which makes contact with the liquid LQ, is the planeparallel plate which is cheaper than the lens, it is enough that theplane parallel plate is merely exchanged immediately before supplyingthe liquid LQ even when any substance (for example, any silicon-basedorganic matter), which deteriorates the transmittance of the projectionoptical system PL, the illuminance of the exposure light beam EL on thesubstrate P, and the uniformity of the illuminance distribution, isadhered to the plane parallel plate, for example, during the transport,the assembling, and/or the adjustment of the exposure apparatus EX. Anadvantage is obtained such that the exchange cost is lowered as comparedwith the case in which the optical element which makes contact with theliquid LQ is the lens. That is, the surface of the optical element whichmakes contact with the liquid LQ is dirtied, for example, due to theadhesion of scattered particles generated from the resist by beingirradiated with the exposure light beam EL or any impurity in the liquidLQ. Therefore, it is necessary to periodically exchange the opticalelement. However, when the optical element is the cheap plane parallelplate, then the cost of the exchange part is low as compared with thelens, and it is possible to shorten the time required for the exchange.Thus, it is possible to suppress the increase in the maintenance cost(running cost) and the decrease in the throughput.

When the pressure, which is generated by the flow of the liquid LQ, islarge between the substrate P and the optical element disposed at theend portion of the projection optical system PL, it is also allowablethat the optical element is tightly fixed so that the optical element isnot moved by the pressure, rather than making the optical element to beexchangeable.

In the embodiments of the present invention, the space between theprojection optical system PL and the surface of the substrate P isfilled with the liquid LQ. However, for example, it is also allowable toadopt an arrangement in which the space is filled with the liquid LQ insuch a state that a cover glass formed of a parallel flat plate isattached to the surface of the substrate P.

The exposure apparatus, to which the liquid immersion method is appliedas described above, is constructed such that the substrate P is exposedwhile filling the optical path space on the outgoing side of theterminal end optical element 2 of the projection optical system PL withthe liquid (pure water). However, the optical path space, which is onthe incoming side of the terminal end optical element 2 of theprojection optical system PL, may be also filled with the liquid (purewater) as disclosed in International Publication No. 2004/019128. Inthis arrangement, it is also appropriate to adjust the pressure of theliquid in the optical path space on the incoming side of the terminalend optical element 2 of the projection optical system PL. The opticalpath space can be filled with the liquid quickly and satisfactorily bystarting the supply of the liquid while evacuating the gas contained inthe optical path space disposed on the incoming side of the terminal endoptical element 2 of the projection optical system PL.

The liquid LQ is water in the embodiments of the present invention.However, the liquid LQ may be any liquid other than water. For example,when the light source of the exposure light beam EL is the F₂ laser, theF₂ laser beam is not transmitted through water. Therefore, liquidspreferably usable as the liquid LQ may include, for example,fluorine-based fluids such as fluorine-based oil and perfluoropolyether(PFPE) through which the F₂ laser beam is transmissive. In this case,the portion, which makes contact with the liquid LQ, is subjected to aliquid-attracting treatment by forming, for example, a thin film with asubstance having a molecular structure containing fluorine having smallpolarity. Alternatively, other than the above, it is also possible touse, as the liquid LQ, liquids (for example, cedar oil) which have thetransmittance with respect to the exposure light beam EL, which have therefractive index as high as possible, and which are stable against thephotoresist coated on the surface of the substrate P and the projectionoptical system PL. Also in this case, the surface treatment is performeddepending on the polarity of the liquid LQ to be used. It is alsopossible to use various fluids having desired refractive indexesincluding, for example, supercritical fluids and gases having highrefractive indexes, in place of pure water as the liquid LQ.

The substrate P, which is usable in the respective embodiments describedabove, is not limited to the semiconductor wafer for producing thesemiconductor device. The applicable substrates include, for example,the glass substrate for the display device, the ceramic wafer for thethin film magnetic head, and the master plate (synthetic silica glass,silicon wafer) for the mask or the reticle to be used for the exposureapparatus.

As for the exposure apparatus EX, the present invention is alsoapplicable to the scanning type exposure apparatus (scanning stepper)based on the step-and-scan system for performing the scanning exposurewith the pattern of the mask M by synchronously moving the mask M andthe substrate P as well as the projection exposure apparatus (stepper)based on the step-and-repeat system for performing the full fieldexposure with the pattern of the mask M in a state in which the mask Mand the substrate P are allowed to stand still, while successivelystep-moving the substrate P. The present invention is also applicable tothe exposure apparatus based on the step-and-stitch system in which atleast two patterns are partially overlaid and transferred on thesubstrate P. The present invention is also applicable to the full fieldexposure apparatus based on the stitch system in which the full fieldexposure is performed on the substrate P by using a projection opticalsystem (for example, the dioptric type projection optical system havinga reduction magnification of ⅛ and including no catoptric element) witha reduction image of a first pattern in a state in which the firstpattern and the substrate P are allowed to substantially stand still,and then the full field exposure is performed on the substrate P bypartially overlaying a reduction image of a second pattern with respectto the first pattern by using the projection optical system in a statein which the second pattern and the substrate P are allowed tosubstantially stand still.

The present invention is also applicable to the exposure apparatusincluding a measuring stage which is provided with a measuring memberand a sensor separately from the stage for holding the substrate P. Inthis arrangement, the member on the measuring stage may be subjected tothe temperature adjustment, for example, in the same manner as the platemember 50, the reference member 300, and the spatial image sensor 500 onthe substrate stage PST as described above, when the projection opticalsystem and the measuring stage are opposed to one another and the liquidimmersion area AR2 is formed on the measuring stage. The exposureapparatus provided with the measuring stage is described, for example,in European Patent Publication No. 1,041,357, contents of which areincorporated herein by reference within a range of permission of thedomestic laws and ordinances of the state designated or selected in thisinternational application.

In the embodiment described above, the exposure apparatus, in which thespace between the projection optical system PL and the substrate P islocally filled with the liquid, is adopted. However, the presentinvention is also applicable to the liquid immersion exposure apparatusin which the entire surface of the substrate as the exposure objectiveis covered with the liquid. The structure and the exposure operation ofthe liquid immersion exposure apparatus in which the entire surface ofthe substrate as the exposure objective is covered with the liquid aredescribed in detail, for example, in Japanese Patent ApplicationLaid-open Nos. 6-124873 and 10-303114 and U.S. Pat. No. 5,825,043,contents of which are incorporated herein by reference within a range ofpermission of the domestic laws and ordinances of the state designatedor selected in this international application.

It is also possible to use the projection optical systems of the varioustypes as described above as the projection optical system provided inthe exposure apparatus. However, the present invention is alsoapplicable to the exposure apparatus of the type having no projectionoptical system, for example, the proximity type exposure apparatus.

In the embodiment described above, the focus/leveling detecting system,which detects the surface position information of the surface of thesubstrate P through the liquid LQ, is adopted. However, it is alsoallowable to adopt the focus/leveling detecting system which detects thesurface position information of the surface of the substrate P beforethe exposure or during the exposure not through the liquid.

In the specified embodiment described above, the optical element 2 atthe end portion of the projection optical system PL is arranged in theopening 70C (light-transmitting portion) of the flow passage-formingmember 70 while allowing the predetermined spacing distance interveningbetween the optical element 2 and the flow passage-forming member 70.However, an arbitrary optical element may be installed to the opening70C of the flow passage-forming member 70. That is, the optical element2 and/or the optical plate as described above may be held by the flowpassage-forming member 70. Also in this case, it is desirable that theprojection optical system PL and the flow passage-forming member 70 havethe distinct support structures from each other in view of theprevention of the transmission of the vibration.

As for the type of the exposure apparatus EX, the present invention isnot limited to the exposure apparatus for the semiconductor deviceproduction for exposing the substrate P with the semiconductor devicepattern. The present invention is also widely applicable, for example,to the exposure apparatus for producing the liquid crystal displaydevice or for producing the display as well as the exposure apparatusfor producing, for example, the thin film magnetic head, the imagepickup device (CCD), the reticle, or the mask.

When the linear motor is used for the substrate stage PST and/or themask stage MST, it is allowable to use any one of linear motors of theair floating type using the air bearing and of the magnetic floatingtype using the Lorentz's force or the reactance force. Each of thestages PST, MST may be either of the type in which the movement iseffected along the guide or of the guideless type in which no guide isprovided. An example of the use of the linear motor for the stage isdisclosed in U.S. Pat. Nos. 5,623,853 and 5,528,118, contents of whichare incorporated herein by reference respectively within a range ofpermission of the domestic laws and ordinances of the state designatedor selected in this international application.

As for the driving mechanism for each of the stages PST, MST, it is alsoallowable to use a plane motor in which a magnet unit provided withtwo-dimensionally arranged magnets and an armature unit provided withtwo-dimensionally arranged coils are opposed to each other, and each ofthe stages PST, MST is driven by the electromagnetic force. In thisarrangement, any one of the magnet unit and the armature unit isconnected to the stage PST, MST, and the other of the magnet unit andthe armature unit is provided on the side of the movable surface of thestage PST, MST.

The reaction force, which is generated in accordance with the movementof the substrate stage PST, may be mechanically released to the floor(ground) by using a frame member so that the reaction force is nottransmitted to the projection optical system PL. The method for handlingthe reaction force is disclosed in detail, for example, in U.S. Pat. No.5,528,118 (Japanese Patent Application Laid-open No. 8-166475), contentsof which are incorporated herein by reference within a range ofpermission of the domestic laws and ordinances of the state designatedor selected in this international application.

The reaction force, which is generated in accordance with the movementof the mask stage MST, may be mechanically released to the floor(ground) by using a frame member so that the reaction force is nottransmitted to the projection optical system PL. The method for handlingthe reaction force is disclosed in detail, for example, in U.S. Pat. No.5,874,820 (Japanese Patent Application Laid-open No. 8-330224), contentsof which are incorporated herein by reference within a range ofpermission of the domestic laws and ordinances of the state designatedor selected in this international application.

As described above, the exposure apparatus EX according to theembodiment of the present invention is produced by assembling thevarious subsystems including the respective constitutive elements asdefined in claims so that the predetermined mechanical accuracy, theelectric accuracy, and the optical accuracy are maintained. In order tosecure the various accuracies, adjustments performed before and afterthe assembling include the adjustment for achieving the optical accuracyfor the various optical systems, the adjustment for achieving themechanical accuracy for the various mechanical systems, and theadjustment for achieving the electric accuracy for the various electricsystems. The steps of assembling the various subsystems into theexposure apparatus include, for example, the mechanical connection, thewiring connection of the electric circuits, and the piping connection ofthe air pressure circuits in correlation with the various subsystems. Itgoes without saying that the steps of assembling the respectiveindividual subsystems are performed before performing the steps ofassembling the various subsystems into the exposure apparatus. When thesteps of assembling the various subsystems into the exposure apparatusare completed, the overall adjustment is performed to secure the variousaccuracies as the entire exposure apparatus. It is desirable that theexposure apparatus is produced in a clean room in which, for example,the temperature and the cleanness are managed.

As shown in FIG. 16, the microdevice such as the semiconductor device isproduced by performing, for example, a step 201 of designing thefunction and the performance of the microdevice, a step 202 ofmanufacturing a mask (reticle) based on the designing step, a step 203of producing a substrate as a base material for the device, an exposureprocess step 204 of exposing the substrate with a pattern of the mask byusing the exposure apparatus EX of the embodiment described above, astep 205 of assembling the device (including a dicing step, a bondingstep, and a packaging step), and an inspection step 206.

INDUSTRIAL APPLICABILITY

According to the present invention, the temperature of the liquid andthe temperature of the object which makes contact with the liquid can bemaintained to be in the desired state. Therefore, the measurementaccuracy obtained when the exposure light beam is radiated through theliquid and the measurement accuracy obtained when the detecting lightbeam is radiated through the liquid can be maintained to be in thesatisfactory state. Therefore, it is possible to produce the devicehaving the desired performance.

1. A liquid immersion exposure apparatus comprising: a projectionsystem; an immersion area forming member provided with an openingthrough which an exposure beam is projected, the immersion area formingmember having a first liquid supply inlet facing downwardly, a secondliquid supply inlet facing toward a path of the exposure beam, and aliquid recovery outlet facing downwardly; a substrate stage systemhaving a first substrate holding member by which a substrate is held,the substrate stage system moving the substrate held by the firstsubstrate holding member below and relative to the projection system andthe immersion area forming member; a first temperature adjustment systemwhich performs temperature adjustment for the first substrate holdingmember, a part of the first temperature adjustment system being providedat the first substrate holding member; and a controller which controlsthe first temperature adjustment system, wherein during exposure, aliquid immersion area is formed on a portion of an upper surface of thesubstrate held by the first substrate holding member while supplying atemperature-adjusted liquid from the first liquid supply inlet andcollecting the supplied liquid from the liquid recovery outlet, whereinduring the exposure, the substrate held by the first substrate holdingmember is exposed with the exposure beam through the liquid immersionarea, and wherein during the exposure, liquid supplied from the secondliquid supply inlet is allowed to flow through the opening to a gapbetween the immersion area forming member and the substrate and theliquid supplied from the second liquid supply inlet to the gap iscollected from the liquid recovery outlet.
 2. The apparatus according toclaim 1, wherein during the exposure, the controller controls atemperature adjustment operation such that a temperature of thesubstrate held by the first substrate holding member is substantiallythe same as a temperature of the liquid to be supplied from the firstliquid supply inlet.
 3. The apparatus according to claim 1, whereinduring the exposure, the temperature-adjusted liquid is supplied via thefirst liquid supply inlet to the gap between the immersion area formingmember and the substrate, and the supplied liquid is collected via theliquid recovery outlet from the gap.
 4. The apparatus according to claim1, further comprising a second temperature adjustment system connectedto a liquid supply apparatus, the second temperature adjustment systemperforming temperature adjustment for liquid delivered from the liquidsupply apparatus, the temperature-adjusted liquid being supplied fromthe first liquid supply inlet of the immersion area forming member. 5.The apparatus according to claim 4, wherein: the second temperatureadjustment system is controlled by the controller, and during theexposure, the controller controls a temperature adjustment operationsuch that a temperature of the liquid to be supplied from the firstliquid supply inlet is substantially the same as a temperature of thesubstrate held by the first substrate holding member.